High-temperature atomic layer deposition device and method

Atomic layer deposition, high temperature technology, applied in coating, metal material coating process, gaseous chemical plating, etc., can solve the problem of shortening process purging time, unsuitable deposition of precursors, slow chamber heating and cooling speed, etc. problems, to shorten the process purging time, achieve temperature-controlled deposition or high-temperature annealing, rapid heating and cooling effects

Inactive Publication Date: 2021-06-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The embodiment of the present invention provides a high-temperature atomic layer deposition device and method, which is used to solve the problem that the chamber of the atomic layer deposition equipment in the prior art is made of metal and the chamber is large, and the heating and cooling speed of the chamber is very slow, which is not suitable. The technical problem of the low-activity atomic layer deposition precursor achieves the unidirectional flow of the precursor gas flow, shortens the process purge time, can quickly heat up and cool down, realizes temperature-controlled deposition or high-temperature annealing, and improves the crystallinity of the deposited film technical effect

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Embodiment 1

[0025] The embodiment of the present invention provides a high-temperature atomic layer deposition device, please refer to figure 1 , the device includes:

[0026] A chamber 3, the chamber 3 is a columnar tubular cavity structure;

[0027] Further, the wall thickness of the chamber 3 is 1-10mm, the length of the chamber 3 is 0.6-3m, and the inner diameter of the chamber 3 is 2.5-20cm. Further, the heat-resistant temperature of the chamber 3 is ≤1200°C. Further, the chamber 3 is made of quartz tube or corundum tube.

[0028] Specifically, the chamber 3 is a cylindrical tubular cavity structure, and the chamber 3 is made of quartz tube or corundum tube, which has the characteristics of fast heating and high temperature resistance, and can quickly heat up and cool down. The temperature can be controlled from room temperature to 1200°C for deposition process or high temperature annealing. Wherein, the chamber 3 preferably adopts a quartz tube. The wall thickness of the chambe...

Embodiment 2

[0036] The embodiment of the present invention provides a method for high temperature atomic layer deposition, please refer to figure 2 , the method includes step 110-step 140:

[0037] Step 110: placing the silicon wafer in the chamber, the surface of the silicon wafer is consistent with the flow direction of the first precursor and the second precursor;

[0038] Step 120: Turn on the vacuum pump and the muffle furnace, and use the muffle furnace to heat the chamber to a first temperature;

[0039] Specifically, place a 5cm×5cm silicon wafer horizontally in the chamber so that the surface of the silicon wafer is consistent with the flow direction of the first precursor and the second precursor, which is conducive to the uniform adsorption of the precursor; turn on the vacuum pump, Turn on the muffle furnace to heat the chamber, use the muffle furnace to heat the chamber to the first temperature, deposit aluminum nitride as in the embodiment of the present invention, pass th...

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Abstract

The invention discloses a high-temperature atomic layer deposition device and method. The device comprises a cavity, a first pipeline, a second pipeline, a muffle furnace and a vacuumizing pipeline; the cavity is of a cylindrical tubular cavity structure; the first pipeline communicates with one end of the cavity; a first precursor is introduced into the cavity through the first pipeline; the second pipeline communicates with one end of the cavity; a second precursor is introduced into the cavity through the second pipeline; the muffle furnace is arranged on the outer side of the cavity; and one end of the vacuumizing pipeline communicates with the other end of the cavity. The technical problems that in the prior art, an atomic layer deposition equipment cavity is made of metal, the cavity is large, the heating and cooling speed of the cavity is low, and the cavity is not suitable for atomic layer deposition precursors with low activity are solved; and one-way flowing of precursor airflow is achieved, the process purging time is shortened, the cavity is rapidly heated and cooled, and the technical effects of temperature-controlled deposition or high-temperature annealing and improvement of crystallinity of a deposited film are achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-temperature atomic layer deposition device and method. Background technique [0002] Atomic layer deposition (ALD) is a special chemical vapor deposition technology that can realize thin film preparation devices for single atomic layer deposition, with excellent shape retention, large-area uniformity and precise film thickness control. Features. Since the International Semiconductor Industry Association listed ALD as a candidate technology compatible with microelectronics in 2001, it has won extensive attention from the industry and academia. In 2007, Inter Corporation introduced ALD deposition technology into the production line on the 45nm technology node of the semiconductor industry, which reduced the power consumption of the microprocessor and increased the operating speed. In recent years, ALD technology has been widely used in the fields of microelectronics...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45544C23C16/45502C23C16/455
Inventor卢维尔明帅强夏洋冷兴龙赵丽莉何萌李楠
OwnerINST OF MICROELECTRONICS CHINESE ACAD OF SCI