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Driver of pulse power supply for plasma aided chemical gas-phase deposition apparatus

A technology of chemical vapor deposition and drive circuit, which is applied in the direction of output power conversion device, electrical components, AC power input conversion to DC power output, etc. It can solve the problems of IGBT damage of high-power devices, and the complex characteristics of PCVD load are not fully considered. , to achieve the effect of improving reliability and impact resistance

Inactive Publication Date: 2004-03-03
XI AN JIAOTONG UNIV
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Problems solved by technology

However, in actual use, it was found that because the original design did not fully consider the complex characteristics of the PCVD load during the high-speed pulse rise period (about one millionth of a second), it is easy to cause damage to the high-power device IGBT

Method used

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  • Driver of pulse power supply for plasma aided chemical gas-phase deposition apparatus
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  • Driver of pulse power supply for plasma aided chemical gas-phase deposition apparatus

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Embodiment Construction

[0016] In order to understand the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. According to the technical scheme of the present invention, the drive circuit of the pulse power supply of the plasma-assisted chemical vapor deposition device includes four groups of mutually isolated drive circuits 40 arranged at the secondary output end of a high-frequency pulse transformer 41, and the drive circuit 40 is composed of: A resistor R1 and a capacitor C1 are connected in parallel. After the parallel connection, one end of the resistor R1 and capacitor C1 is connected to an output end of the secondary side of the high-frequency pulse transformer 41. On the output end, three diodes D1, D1, D5 and D9; the cathode of diode D5 is respectively connected to the anode of diode D1 and D9; the cathode of diode D5 in the middle of its  type is also provided with a resistor ...

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Abstract

A driver of the pulse power supply for plasma aided chemical gas-phase deposition equipment is composed of 4 drive circuits, which are isolated from each other and corrected to the secondary windings of HF pulse transformer. It features that its circuit structure can ensure high anti-interference power, so having high reliability.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, and relates to a driving circuit of a power supply, in particular to a driving circuit of a pulse power supply in a plasma-assisted chemical vapor deposition (PCVD) device. Background technique [0002] The function of the power supply in the plasma-assisted chemical vapor deposition (PCVD) device is to fill some working gas into the vacuum container at a specific temperature, and the high voltage output by the power supply is applied between the two electrodes in the container to make the gas in the container Ionization is generated to provide material preparation for chemical vapor deposition of thin film materials. [0003] At present, the power supply for PCVD is gradually transitioning from DC power supply to pulse power supply, but most of the pulse power supplies used are chopper-type pulse power supplies, and the peak value of the output pulse voltage is low. In recent years,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/50C23C16/515H02M7/758
Inventor 徐可为马胜利叶靖国何家文
Owner XI AN JIAOTONG UNIV
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