Invisible light emitting diode and preparation method thereof
A technology of light-emitting diodes and visible light, which is applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of no red burst pure infrared demand restrictions, etc., to improve photoelectric performance and reliability, solve red burst phenomenon, and improve crystal quality. Effect
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Embodiment 1
[0044] This embodiment provides an invisible light-emitting diode and its manufacturing method, using a GaAs layer and an In x Ga 1-x The As layer is used as the absorbing layer, when the current density is greater than 1A / mm 2 Under certain circumstances, the visible light part can be effectively removed, and the red burst phenomenon of the invisible light-emitting diode can be effectively solved.
[0045] figure 1 It is a schematic diagram of an LED epitaxial structure in a preferred embodiment, and the LED epitaxial structure includes: a growth substrate 100; a semiconductor epitaxial stack, including a first current spreading layer 104, The first In content transition layer 105a, the first In x1 Ga 1-x1 As layer 105 , first capping layer 106 , active layer 107 , second capping layer 108 , second current spreading layer 109 and second ohmic contact layer 110 .
[0046] Specifically, refer to figure 1 The material of the growth substrate 100 includes but not limited to...
Embodiment 2
[0073] Figure 5 It is a schematic diagram of the LED epitaxial structure of another preferred embodiment, which is the same as that of Embodiment 1. figure 1 The difference of the epitaxial structure in this embodiment is that, in this embodiment, there is a second In x2 Ga 1-x2 As layer 111, the second In x2 Ga 1-x2 The range of x2 of the As layer 111 is 0x2 Ga 1-x2 The thickness of the As layer 111 is 100~1000nm, and the doping concentration is 1E+17~4E+18 / cm 3 . The second In x2 Ga 1-x2 The As layer 111 can absorb the emission of visible light with a wavelength below 890nm, which can further solve the problem of red burst of invisible light emitting diodes.
[0074] Due to the second In x2 Ga 1-x2 The large mismatch between the As layer 111 and the substrate results in relatively large stress. In order to alleviate this stress, in this embodiment, the second cladding layer 108 and the second In x2 Ga 1-x2 A second In content transition layer 111a is inserted be...
Embodiment 3
[0085] Figure 9 It is a structural schematic diagram of an invisible light emitting diode in this embodiment, as Figure 9 As shown, the invisible light emitting diode includes a substrate 200, the semiconductor epitaxial stack is bonded to the substrate 200 through the bonding layer 201, and the semiconductor epitaxial stack includes the second stacked sequentially on the substrate 200. Ohmic contact layer 110 , second current spreading layer 109 , second covering layer 108 , active layer 107 , first covering 106 , first current spreading layer 104 and first ohmic contact layer 103 .
[0086] The first current spreading layer 104 is a GaAs layer, and the thickness of the first current spreading layer 104 is 5-9 um. The doping concentration of the first current spreading layer 104 is 1E+17~4E+18 / cm 3 . Since the GaAs material has an intrinsic bandgap of 1.42ev and can absorb wavelengths below 870nm, the first current spreading layer 104 is a GaAs layer, which can solve the...
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Abstract
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