Semiconductor device having low dielectric film and fabrication process thereof
A technology of semiconductors and devices, which is applied in the field of semiconductor devices, can solve problems such as improving the operating speed of semiconductor devices, and achieve the effect of minimizing signal delay
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no. 1 example
[0065] Figures 3A-3C A method of manufacturing a semiconductor device according to a first embodiment of the present invention is shown.
[0066] see Figure 3A , a first insulating film 2 is formed on a substrate 1, and a second insulating film 3 is formed on the first insulating film to form a part of a semiconductor device.
[0067] Next, at Figure 3B In the step, an opening 3A is formed in the second insulating film 3, and the Figure 3C In the step of forming the opening 2A aligned with the opening 3A in the first insulating film 2, this is accomplished by applying a dry etching process in which a recipe for etching the first insulating film is used and the second insulating film is 3 is used as a hard mask.
[0068] Table 1 below shows possible combinations of materials used for the first and second insulating films 2 and 3 described above.
[0069] Hard mask layer (insulating layer 3)
HSQ
organic
SiO with C 2
layer to etch ...
no. 2 example
[0076] Figures 4A-4F A method of manufacturing a semiconductor device having a multilayer interconnection structure according to a second embodiment of the present invention is shown, wherein those components corresponding to those described above are denoted by the same symbols and descriptions are omitted.
[0077] see Figure 4A , this step corresponds to the previously described Figure 1AThe step of forming on the substrate 10 similar to Figure 1A The multilayer structure of , the difference is that, Figure 4A The structure uses etching stopper films 23, 25 and 27 made of SiOCH containing C (concentration: about 55 wt%) instead of the etch stopper films 13, 15 and 17.
[0078] Next, at Figure 4B In the step, adopt the etching formula for etching SiN film, use photoresist pattern 18 as mask to carry out dry etching process to SiOCH film 27, form an opening corresponding to photoresist opening 18A in SiOCH film 27 . It should be noted that the photoresist opening ...
no. 3 example
[0088] Figures 5A-5E A method of manufacturing a semiconductor device according to a third embodiment of the present invention is shown, in which components corresponding to those described previously are denoted by the same symbols and descriptions are omitted.
[0089] see corresponding to Figure 4A steps Figure 5A , by sequentially depositing the SiOCH film 23, the interlayer insulating film 14, the SiOCH film 25, the interlayer insulating film 16, and the SiOCH film 27, on the interconnection layer 12 provided on the interlayer insulating film 11 on the Si substrate Form a layered structure. In addition, a photoresist pattern 18 is formed on the layered structure thus formed, wherein the photoresist pattern 18 has a photoresist opening 18A corresponding to a contact hole to be formed in the multilayer interconnection structure, similarly to the foregoing description. the embodiment.
[0090] Next, at Figure 5B In the step, using the photoresist pattern 18 as a mas...
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