Semiconductor Flash Memory Device and Method of Fabricating the Same
a technology of semiconductor memory and flash memory, which is applied in the direction of semiconductor memory devices, electrical appliances, transistors, etc., can solve the problems of non-uniform operation characteristics of memory cells, odd and even-numbered memory cells forming a pair which are arranged symmetrically in a mirror type, and may not be uniform, so as to achieve satisfactory operation of memory cells
Inactive Publication Date: 2009-07-30
CHOI YONG SUK +4
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Benefits of technology
The proposed design minimizes miss-alignment and enhances operational efficiency by ensuring uniform channel lengths and improved data storage mechanisms, maintaining high integration density and operational performance in reduced dimensions.
Problems solved by technology
Volatile semiconductor memory devices lose data stored in memory cells when there is no external power supply.
Operational characteristics may then be non-uniform between memory cells.
For example, odd and even-numbered memory cells forming a pair which are arranged symmetrically in a mirror type may not be uniform.
Moreover, as the size of flash memory devices is reduced and integration density of semiconductor apparatuses increases, an effective channel length through which the control gate electrode overlaps with the semiconductor substrate becomes shorter and disturbance characteristics therein degrade.
Additionally, a length of the floating gate electrode becomes shorter, short channel effect may result, degrading the efficiency of operation in the flash memory device.
Method used
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[0043]Exemplary embodiments of the present invention will be described below in more detail with reference to the accompanying drawings. The present disclosure may, however, be embodied in different forms and should not be constructed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.
[0044]In the figures, the dimensions of layers and regions may be exaggerated for clarity of illustration. It will also be understood that when a layer (or film) is referred to as being ‘on’ another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Further, it will be understood that when a layer is referred to as being ‘under’ another layer, it can be directly under, and one or more intervening layers may also be present. In addition, it will also be understood th...
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A semiconductor flash memory device. The flash memory device includes a floating gate electrode disposed in a recess having slanted sides in a semiconductor substrate. A gate insulation film is interposed between the floating gate electrode and the semiconductor substrate. A control gate electrode is disposed over the floating gate electrode. The floating gate electrode includes projections adjacent to the slanted sides of the recess.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a division of U.S. patent application Ser. No. 11 / 648,057, filed Dec. 29, 2006, which claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2006-0048945 filed on May 30, 2006, the entire contents of which are hereby incorporated by reference.BACKGROUND[0002]1. Technical Field[0003]The present disclosure relates to semiconductor devices and more particularly to, a semiconductor flash memory device and method of fabricating the same.[0004]2. Discussion of the Related Art[0005]Semiconductor memory devices can be either volatile or nonvolatile. Volatile semiconductor memory devices lose data stored in memory cells when there is no external power supply. Examples of volatile memory devices include dynamic random access memory (DRAM) and static random access memory (SRAM). Nonvolatile semiconductor memory devices retain their data stored in memory cells even without external power supply. Examples of nonv...
Claims
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IPC IPC(8): H01L29/788H10B69/00
CPCH01L21/28273H01L29/7881H01L29/42336H01L29/40114H01L29/66825
InventorCHOI, YONG-SUKHAN, JEONG-UKJEON, HEE-SEOGYANG, SCUNG-JINKWON, ILYOK-KI
OwnerCHOI YONG SUK