Techniques and apparatus for elongation patterning using angled ion beams
a technology of ion beams and elongation patterns, applied in the direction of electrical apparatus, basic electric elements, electric discharge tubes, etc., can solve the problems of increasing difficulty in patterning features, increasing difficulty in obtaining the correct shape, and increasing difficulty in overlaying
Inactive Publication Date: 2021-12-02
VARIAN SEMICON EQUIP ASSOC INC
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Benefits of technology
Enables precise elongation of features with high aspect ratios and reduced overlay errors, allowing for smaller feature separations and reduced mask usage, improving patterning capabilities beyond conventional lithography limits.
Problems solved by technology
As semiconductor devices continue to scale to smaller dimensions, the ability to pattern features becomes increasingly difficult.
These difficulties include in one aspect the ability to obtain features at a target size for a given technology generation.
Another difficult is the ability to obtain the correct shape of a patterned feature, as well as packing density, and the ability to obtain correct overlay to structures patterned in previous processing operations.
In another example, overlay error represents a challenge to extend lithography to advanced nodes.
While multi-patterning has been used to address feature width and pitch reduction of features, overlay becomes an increasing challenge.
A second reason is as multiple cut masks are coming into use, multiple overlay issues between cut masks and the other features on a substrate arise.
One further challenge is to print small features such as cavities, where the cavities are separated by a small distance, on the order of nanometers or tens of nanometers in present day technology.
As an example, printing of adjacent linear features with the appropriate tip-to-tip distance becomes increasing challenging as overall pitch of device structures continues to shrink.
Method used
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[0023]The present embodiments will now be described more fully hereinafter with reference to the accompanying drawings, where some embodiments are shown. The subject matter of the present disclosure may be embodied in many different forms and are not to be construed as limited to the embodiments set forth herein. These embodiments are provided so this disclosure will be thorough and complete, and will fully convey the scope of the subject matter to those skilled in the art. In the drawings, like numbers refer to like elements throughout.
[0024]The present embodiments provide novel techniques and apparatus to pattern substrates and in particular novel techniques to etch a cavity disposed in a substrate, along a designed direction. Such processing may be deemed elongation patterning, where a feature such as a via or trench may be formed having an initial shape and size, and may be subsequently elongated along the designed direction using a series of etch operations. The designed direct...
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A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in a first exposure to the cavity, wherein after the first exposure the cavity has a second length, greater than the first length; directing normal ions in a second exposure to the cavity, wherein the cavity retains the second length after the second exposure; and directing second angled ions to the cavity is a third exposure, subsequent to the second exposure, wherein the cavity has a third length, greater than the second length, after the third exposure.
Description
RELATED APPLICATIONS[0001]This application is a divisional of U.S. Non-Provisional patent application Ser. No. 16 / 053,329, filed on Aug. 2, 2018, entitled TECHNIQUES AND APPARATUS FOR ELONGATION PATTERNING USING ANGLED ION BEAMS, which claims priority to U.S. Provisional Patent Application No. 62 / 673,604, file May 18, 2018, entitled TECHNIQUES AND APPARATUS FOR ELONGATION PATTERNING USING ANGLED ION BEAMS, which applications are incorporated by reference herein in their entireties.FIELD[0002]The present embodiments relate to transistor processing techniques, and more particularly, to etch processing for patterning devices.BACKGROUND[0003]As semiconductor devices continue to scale to smaller dimensions, the ability to pattern features becomes increasingly difficult. These difficulties include in one aspect the ability to obtain features at a target size for a given technology generation. Another difficult is the ability to obtain the correct shape of a patterned feature, as well as p...
Claims
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IPC IPC(8): H01L21/033H01L21/67H01J37/32H01L21/311
CPCH01L21/0337H01L21/0335H01L21/67069H01J2237/3341H01L21/31116H01J37/32422H01J37/32899H01J37/32449H01L21/68764H01L21/31122H01L21/76816
InventorANGLIN, KEVIN R.RUFFELL, SIMON
OwnerVARIAN SEMICON EQUIP ASSOC INC