3results about How to "Flat distribution" patented technology

The invention provides a tin plating device for photovoltaic welding strip production, and relates to the field of photovoltaic welding strip production, the tin plating device comprises a welding strip tin plating machine body and a protective cover plate, the protective cover plate is inserted in the upper surface of the welding strip tin plating machine body, and the upper end of the welding strip tin plating machine body is connected with an excess material removing frame through a fixed side plate; liquid rollers are distributed in the excess material discharging frame in a bilateral symmetry mode, the side ends of the liquid rollers are in shaft connection with a fixing frame, a liquid squeezing barrel frame is fixed to the lower end face of the fixing frame and is in shaft connection with a rotating column through a motor, the surface of the rotating column is sleeved with a sponge barrel, and the upper barrel face of the sponge barrel is attached to the lower roller face of the liquid rollers. And a liquid discharging filter screen is arranged on the cylinder surface of the lower end of the liquid squeezing cylinder frame. The problem that in the prior art, when a photovoltaic welding strip soaked in tin liquor is moved out of a water tank, the strip face is prone to carrying the tin liquor to drop into the external environment, and harm is generated is solved.

The present invention discloses a GaN HEMT device for improving linearity and a preparation method thereof, the device comprising: a substrate layer; a GaN buffer layer, arranged on the substrate layer; a back-to-back barrier layer, arranged on the GaN buffer layer, the Al component in the back-to-back barrier layer increasing from x to y from top to bottom and then decreasing from y to 0; a source electrode and a drain electrode, the partial depths of the source electrode and the drain electrode being respectively located inside the two ends of the GaN buffer layer; a passivation layer, the passivation layer being arranged on the back-to-back barrier layer; and a gate electrode, the gate electrode being arranged on the back-to-back barrier layer in the gate electrode region. The new type of gradually changing barrier GaN HEMT device provided by the present invention has significantly improved transconductance flatness compared with conventional structures, and the linearity is improved. In addition, compared with a single gradually changing Al component barrier structure, the distribution of the electric field under the gate of the new structure is flatter. Therefore, this structure takes into account good frequency characteristics, breakdown characteristics and excellent linearity.

This invention relates to the field of voice coil motor technology, specifically to a compact multi-air-gap uniform magnetic field high-thrust planar voice coil motor, comprising a motor outer frame, a first stator, a second stator, and a third stator. The first stator is located in the middle of the motor outer frame. Two sets of second stators are respectively installed on both sides of the first stator, forming an inner air gap between the two sets of second stators. Two sets of third stators are respectively located at the upper and lower ends of the motor outer frame, forming an outer air gap between the second stator and the third stator. A set of first inner movers is disposed in the inner air gap, and several sets of second inner movers are disposed in the outer air gap. In this invention, the magnetic flux starts from the permanent magnet, passes through the yoke, crosses the working air gap, and returns to the main channel of the yoke, reducing magnetic flux leakage into the outer space, thereby improving magnetic field utilization and reducing magnetic leakage. The parallel operation of multiple air gaps increases the total thrust and thrust density without significantly increasing the overall size.