4results about How to "Smooth expansion" patented technology

The application relates to the technical field of pipeline repair, in particular to a trenchless pipeline lining repair system which comprises a pipeline to be repaired; a lining hose assembly which comprises a protective film and a lining hose, the protective film is arranged between the lining hose and the pipeline to be repaired, and the lining hose is made of a glass fiber hose impregnated with a light-cured resin adhesive; an air pressure supply unit which is used for inflating the lining hose to make the lining hose expand; and a UV curing lamp group which is arranged in the lining hose, can move along the axial direction of the lining hose and is used for curing the lining hose assembly. The application has the effect of improving the convenience of pipeline repair.

This invention discloses an optimized cell layout structure for a trench MOSFET and its fabrication method. The optimized cell layout structure of the trench MOSFET includes an epitaxial layer, within which multiple trench structures extending in the thickness direction and of different depths are formed. The trench walls are provided with a gate oxide layer and filled with a polysilicon gate. A first well region and a second well region with different extension depths are formed between the trenches, and a corresponding conductivity-type doped region is formed on the surface of each well region. By constructing trench and well region structures of different depths, this invention enables the formation of channel units with different conduction characteristics inside the device, achieving current distribution and flow when the device is turned on, improving current density concentration, enhancing current distribution uniformity, and improving device reliability.

The invention discloses a unit layout optimization structure of a trench MOSFET and a preparation method thereof, the unit layout optimization structure of the trench MOSFET comprises an epitaxial layer, a plurality of trench structures which extend in the thickness direction and are different in depth are formed in the epitaxial layer, the trench wall of each trench structure is provided with a gate oxide layer and is filled with a polycrystalline silicon gate, and the gate oxide layer and the polycrystalline silicon gate are formed in the epitaxial layer. A first well region and a second well region which are different in extending depth are formed between the grooves, and corresponding conductive doped regions are formed on the surface layers of the well regions respectively. According to the invention, channel units with different conduction characteristics are formed in the device by constructing grooves and well region structures with different depths, so that current distribution flow is realized when the device is conducted, the current density concentration phenomenon is improved, and the current distribution uniformity and the device reliability are improved.

The present application relates to the field of tower type photothermal power station mirror field control system, specifically relates to a kind of tower type photothermal distributed mirror field hybrid control system based on block chain consensus mechanism, comprising: physical layer, data layer, network layer, consensus layer, contract layer, application management layer.Through the depth coupling control theory and block chain technology, the contradiction between the limited mirror power and the function demand of block chain full node is solved, the EFB is established as the sub-field agent full node, and the main and standby redundancy mechanism is designed, which guarantees the reliability of control link, realizes efficient distributed consensus and smart contract execution, the DW-PBFT consensus mechanism proposed reduces the consensus delay while improving fault tolerance through dynamic weight model, and the NTRU-SPHINCS+ hybrid quantum-resistant password architecture provides future-oriented security protection for the system.