The invention belongs to the technical field of semiconductors, and discloses a
composite coating for a
semiconductor device and a preparation method thereof.The preparation method comprises the following preparation steps that organic resin and a carburant are added into an
alcohol solvent to be evenly mixed, and a resin solution is obtained; the method comprises the following steps: adding a
tantalum source and a phase forming
accelerant into an
alcohol solvent, stirring and mixing to obtain a
tantalum solution; the surface of the base body is coated with a resin solution and a
tantalum solution, heating curing,
carbonization and cooling are carried out, a
composite coating containing
glassy carbon and
tantalum carbide is obtained, and the
composite coating is of a single-layer structure or a double-layer structure; the single-layer structure is a composite single-layer
coating containing
glassy carbon and
tantalum carbide; the double-layer structure is a double-layer
coating structure comprising a
glassy carbon layer and a glassy carbon and
tantalum carbide composite layer from bottom to top from one side of the surface of the base body. The density of the composite
coating prepared by the method can be effectively improved, so that the
corrosion resistance of the composite coating in a
plasma environment is improved.