Surface polishing method for protective side edge of group II-VI semiconductor material
A surface polishing and semiconductor technology, applied in the direction of surface polishing machine tools, semiconductor/solid device manufacturing, grinding/polishing equipment, etc., can solve problems such as gaps, crack defects, debris, etc.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0018] Take the CdZnTe wafer as an example below for a detailed introduction:
[0019] As shown in the attached figure, the thickness of the original chip 1 is 1100 microns, and the thickness of the molded wafer 2 is required to be 550 microns. First, use a dicing machine to draw the area required for the molded wafer on the surface of the original film, such as 20 mm X 30 mm, and cut the slit 3 The depth is about 600 microns, and then put wax on the surface of the original film with slits and heat it to 70 ° C. After the wax melts and sticks to the flat glass substrate, the surface of the original film is treated with a 3 micron alumina suspension. Coarse mechanical grinding, when grinding to a thickness of 608-610 microns, then mechanical chemical polishing until the required thickness of 550 microns can be obtained to obtain a CdZnTe molded wafer with no damage to the side edge. Finally, after heating to soften the wax, take out the molded wafer part in the central area, an...
PUM
![No PUM](https://static-eureka.patsnap.com/ssr/23.2.0/_nuxt/noPUMSmall.5c5f49c7.png)
Abstract
Description
Claims
Application Information
![application no application](https://static-eureka.patsnap.com/ssr/23.2.0/_nuxt/application.06fe782c.png)
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap