Semiconductor device and its production method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Publication Date
- 2009-06-17
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
[0001] This application is a divisional application of the application dated May 26, 1994, the application number is 99120260.0, and the invention title is "semiconductor device and its manufacturing method". technical field
[0002] The present invention relates to semiconductor devices of TFTs (Thin Film Transistors) mounted on an insulating substrate such as glass. In particular, it relates to semiconductor devices used in active matrix type liquid crystal displays. Background technique
[0003] Has a TFT mounted on an insulating substrate such as glass s Semiconductor devices used in active matrix liquid crystal displays, image sensors and similar devices, using TFT s are well known as motivating image elements.
[0004] Typically, TFTs made of thin-film silicon semiconductors are used in these devices. Thin-film silicon semiconductors can be roughly divided into two categories: one is made of amorphous (amorphous) silicon (α-S 1 ) is composed of semiconductors, and ...