Organic polymer electronic memory and manufacturing method therefor

Abstract

The invention discloses an organic polymer electronic memory which comprises an upper electrode, a lower electrode and an organic polymer layer arranged between the upper electrode and the lower electrode, wherein, the upper electrode is made from aluminum, the lower electrode is made from nanometer indium tin metal oxide, and the organic polymer is chosen from an azo polymer which is obtained by free radical polymerization of one of acrylate azo monomers which takes nitryl or bromine substituent or methoxy group as an terminal substituent group, and the average molecular weight of the azo polymer is 2,500-15,000. The azo polymer memory device has the advantages of simple structure and preparation process, rapid storage speed and good stability; and the storage classes of the azo polymer device can be correspondingly adjusted by adjusting the terminal substituent group of the azo polymer.

Description

technical field

[0001] The invention relates to an electronic memory, in particular to an organic polymer memory and a manufacturing method thereof. Background technique

[0002] The increasing development of information technology poses severe challenges to the storage capacity of information materials. How to make terminal products light, thin, short and small has become an urgent problem to be solved in the semiconductor industry.

[0003] Due to the limitation of storage capacity, traditional semiconductor materials such as Si, Ge and GaAs are about to be replaced by some electrically active organic and polymer materials.

[0004] Organic polymer storage technology stands out, and a variety of new storage technologies and devices have been born one after another. Recently, flash memory (Flash) and write-once-read-many (WORM) polymer storage materials have attracted much attention due to their advantages of simple structure, measurability, low loss and large data storage...

Images