Insulated trench gate electrode bipolar type transistor

A technology of bipolar transistors and insulated gates, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of increased amplification factor of PNP transistors, reduced safe working area, and reduced anti-latch-up ability, so as to reduce contact Resistance, lower temperature rise, and improved high-temperature latch-up resistance
CN101452952AInactive Publication Date: 2009-06-10UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2009-06-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a slot simulated gate bipolar transistor, which belongs to the technical field of semiconductor power devices. Based on the prior slot simulated gate bipolar transistor, the invention is additionally provided with a P<+> hole collecting zone (5), to avoid holes entering a P type zone (6) and achieve good action of bypassing the holes, thereby greatly weakening the parasitic thyristor effect, improving the safety operation zone of the device and particularly improving the high-temperature latching resistance of the device. Simultaneously, a metal emitter (8) of the invention is made into a slot metal electrode. Besides the reduction of the contact resistance of the device, the device can dissipate heat more easily and reduces temperature rise, thereby achieving excellent high-temperature operating characteristics. Furthermore, During the injection of the P<+> hole collecting zone(5) and an N<+> source(7) of the slot simulated gate bipolar transistor, an additional masking plate is needed, thereby properly lowering production cost.
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Description

technical field

[0001] The invention relates to a trench insulated gate bipolar transistor, which can be well used in high-temperature environments and belongs to the technical field of semiconductor power devices. Background technique

[0002] Insulated Gate Bipolar Transistor (IGBT) is a rapidly developing and widely used power electronic device. It utilizes the high input impedance of MOSFET, simple driving circuit and high current density of bipolar transistor, saturation A new device combined with the advantages of low pressure drop. Now it is widely used in induction cooker, UPS uninterruptible power supply, automotive electronic igniter, frequency converter, motor transmission system and other energy conversion devices.

[0003] In 1982, when the insulated gate bipolar transistor was first proposed, it was a planar gate punch-through type, and its structure is as follows figure 1 As shown, it is sequentially epitaxial N on a high-concentration P+ substrate 2 + buff...

Claims

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