Anomaly detection method of UV photoresist hardening platform

Abstract

The invention discloses an anomaly detection method of a UV photoresist hardening platform; the method comprises the following steps: a predetected photoresist film is used as detecting medium, and a difference value of amount of shrinkage and the degree of change of optical characteristics of the predetected photoresist film before and after UV hardening treatment is measured and compared, thus realizing the control to the working condition of the UV photoresist hardening platform, wherein the predetected photoresist film is a photoresist coating layer on a non-IC image wafer disk; the difference value of the amount of shrinkage is embodied on the change of the thickness of the predetected photoresist; the change of the optical characteristics is embodied on the degree of change of refractive index and reflection index and the like. The design proposal can pre-judge and control the influence degree of anomaly of the UV hardening platform from detecting results, improve the hardening yield of the photosensitive silicon wafer photoresist by statistics of the different value and control of manufacture procedures, reduce photoresist flow to the utmost and reduce the probability of forming convex sharp angles.

Description

technical field [0001] The invention relates to semiconductor manufacturing, in particular to a method for detecting abnormality of a UV photoresist hardening machine. Background technique [0002] In the semiconductor manufacturing process, especially in the pre-order wafer process, the silicon wafer that has been drawn, sliced, ground, and oxidized by a single crystal silicon rod needs to be evenly coated with a photosensitive adhesive (hereinafter referred to as photoresist) in an extremely thin thickness. Distributed on it to make the silicon wafer photosensitive, the subsequent circuit layout photolithography process can be carried out. Under the irradiation of UV light, the lens and the photolithographic mask with designed circuit form a very small and dense circuit pattern on the surface of the photosensitive silicon wafer. In this way, the photosensitive silicon wafer that has undergone photoetching can continue to undergo a series of process steps such as subsequen...

AI Technical Summary

Problems solved by technology

[0004] In view of the existing defects of the above-mentioned prior art, the purpose of the present invention is to provide a method for detecting abnormality of a UV photoresist hardening machine, so as to solve the problem of UV radiation caused by photosensitive silicon wafers in the process of photoresist hardening in the machine. Photoresist flow phenomenon caused by abnormal effects such as too weak or too high temperature

Images