Method for manufacturing patterned metal layer and film transistor
A patterned metal layer and thin-film transistor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high process cost and high metal mask production cost, and achieve the effect of reducing production cost
Inactive Publication Date: 2011-04-27
IND TECH RES INST
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Problems solved by technology
At present, the electrode patterning of the top-contact organic thin film transistor device uses a metal mask (shadowmask) evaporation process, which is prone to the problems of high manufacturing cost and high process cost of the metal mask.
Furthermore, with the continuous miniaturization of electronic components, the traditional use of metal masks (shadow mask) to fabricate metal electrodes in thin film transistors is also facing technical challenges.
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[0022] figure 1 It is a flow chart of the steps of a method for fabricating a patterned metal layer provided by the present invention. In step 101, a support substrate having a transfer sacrificial layer is firstly provided. The supporting substrate has light transmission, such as a glass substrate, and the transfer sacrificial layer has light-to-heat conversion characteristics, can absorb specific laser wavelengths, and convert the absorbed laser light into heat, so that the light-absorbing part of the transfer sacrificial layer is heated and melted, and detached from the supporting substrate. The transfer sacrificial layer may be a poly(vinylacohol), PVA) layer. In step 102, a metal layer is formed on the transfer sacrificial layer, for example, the metal layer is formed on the transfer sacrificial layer by evaporation or sputtering. In step 103, the support substrate is approached or contacted with a substrate with the surface having the metal layer facing down, for exam...
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The invention provides a method for manufacturing a patterned metal layer and a film transistor, wherein a metal layer is firstly formed on a transfer printing sacrificial layer of a first substrate with photo-thermal conversion property. The patterned metal layer is transfer-printed on a second substrate by using a laser transfer printing technology to form a metal layer with the predetermined pattern on the second substrate. The invention absorbs the laser through the transfer printing sacrificial layer which is arranged between a transfer-printed metal layer and the first substrate so as toprevent the transfer-printed metal layer from absorbing light and being heated to prevent oxidization.
Description
technical field [0001] The present invention relates to a method for making a patterned metal layer; in particular, it relates to a method for making the patterned metal layer by laser transfer technology. Background technique [0002] As the technology matures, lighter, thinner, portable, and flexible displays such as electronic paper have attracted the attention of many people, and many large companies have also joined the ranks of research and development. Organic thin-film transistors use organic molecular materials to develop thin-film transistors suitable for electronic products. Its biggest advantage is that the components can be produced at low temperatures, and the characteristics of the transistor components can still be maintained when the panel is bent, achieving normal image quality effects. Such applications will accelerate the realization of flexible electronics such as displays. At present, the electrode patterning of the top-contact organic thin film transi...
Claims
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IPC IPC(8): H01L21/00H01L21/02H01L21/28H01L21/3205H01L21/768H01L21/84H01L21/336
Inventor廖金龙何家充
OwnerIND TECH RES INST