Optical diode based on asymmetrical metal double-gate structure

Abstract

The invention discloses an optical diode based on an asymmetrical metal double-gate structure, which comprises a first metal gate and a second metal gate, wherein the first metal gate and the second metal gate are arranged in parallel; the gate period of the second metal gate is two times of the gate period of the first metal gate; and a surface micro-cavity is arranged on the outer surface of the second metal gate. In the invention, the existence of the distance between the two layers of metal gates aims to utilize the specific transmission inhibition phenomenon in the double-gate structure,and the existence of the structure can very effectively realize the unidirectivity of zero-level transmission. On the other hand, in the invention, an additional surface micro-cavity structure is improved on the outer surface of the gate with a larger period, thereby realizing the transmission of which the energy transmission rate reaches 60% in a certain wavelength range. The control of the whole structure on unidirectional transmission of electromagnetic waves can act on the broadband range.

Description

technical field [0001] The invention relates to an optical diode, in particular to an optical diode based on an asymmetric metal double gate structure. Background technique [0002] All-optical devices have attracted widespread attention because of their huge potential application value in optical communication and quantum computing. One of the very important logic units is an optical isolator. Borrowing the concept of a diode in an electronic circuit, it can be called an optical diode. . The main function of optical diodes is to control the one-way transmission of electromagnetic waves, that is, the propagation behavior of electromagnetic waves has the characteristics of non-commutation in two directions. [0003] Early on, optical diode structures were proposed that had a strong dependence on the properties of the material itself. Michael Scalora et al. published in Physics Review E 76, 2023 (1994) (Physical Review E) "The photonic band edge optical diode (photonic band ...

AI Technical Summary

Problems solved by technology

[0008] Purpose of the invention: The purpose of the present invention is to overcome the deficiencies of the prior art and provide an optical diode configuration based on an asymmetric metal double-gate structure, which overcomes the inability of the existing optical diode structure to achieve simple material selection and zero-order transmission at the same time. The lack of directivity, the material selection is simple, and can achieve zero-order transmission unidirectionality, which can realize the one-way transmission of electromagnetic waves in the broadband range

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