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Light emitting element

A technology of light-emitting components and light-emitting units, which is applied in the direction of electrical components, semiconductor devices, circuits, etc.

Active Publication Date: 2014-12-31
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the first electrode and the second electrode of the light-emitting unit are located at different heights, the height difference will often become a major factor affecting the process yield during the wire bond or flip-chip process.
When connecting light-emitting elements of different heights into an integrated device, the difference in height is a major challenge when connecting metal wires

Method used

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  • Light emitting element
  • Light emitting element
  • Light emitting element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] figure 1 The light-emitting element 10 shown in the embodiment of the present invention includes: a carrier plate 100 having a first surface 101 and a second surface 102; a light-emitting unit 200 located on the first surface 101 of the carrier plate 100 and having a second semiconductor layer 202 , the light emitting layer 203 is located on the second semiconductor layer 202 and the first semiconductor layer 201 is located on the light emitting layer 203 . A reflective layer (not shown) can be optionally added between the light-emitting unit 200 and the carrier 100. When the light-emitting layer 203 emits light, the light emitted toward the first surface 101 of the carrier 100 can be reflected by the reflective layer. The direction of the light to be exported. The light emitting unit 200 further includes a first electrode 204 formed on the first semiconductor layer 201, a second electrode 205 formed on the second semiconductor layer 202, and a first tunnel plug 301 an...

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PUM

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Abstract

The invention provides a light emitting element which comprises a support plate and a light emitting unit which is positioned on the support plate. The support plate has a first surface and a second surface. The light emitting unit is on the first surface of the support plate and has a first semiconductor layer, a first electrode, a light emitting layer, a second semiconductor layer, a second electrode and at least a through substrate via (TSV). The through substrate via penetrates through the light emitting unit and is electrically connected with the first electrode or the second electrode. Further, the light emitting element can form a circuit with an external power supply or other light emitting element through the through substrate via and a connection gasket on the second surface of the support plate.

Description

technical field [0001] The invention relates to a light-emitting element. A conductive tunnel plug is formed in the light-emitting element by using semiconductor process technology, and current is introduced into the light-emitting element through the tunnel plug. Background technique [0002] The applicability of solid-state light-emitting devices is gradually increasing, and the requirements for manufacturing costs are also gradually being paid attention to. The current common manufacturing process of light-emitting devices is mainly to form a light-emitting unit with an epitaxial structure in the front-end process, and then connect the light-emitting unit to a power supply or other components in the back-end process by wire bond or flip-chip. However, since the first electrode and the second electrode of the light-emitting unit are located at different heights, the height difference often becomes a major factor affecting the process yield during the wire bond or flip-chip...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/62
Inventor 刘欣茂谢明勋洪盟渊韩政男李宗宪
Owner EPISTAR CORP