Method for measuring ohmic contact resistivity between black silicon material and metal electrodes

A metal electrode, ohmic contact technology, applied in the direction of measuring resistance/reactance/impedance, measuring electrical variables, measuring devices, etc., can solve the problems of testing the specific contact resistivity of black silicon materials and metal electrodes, and achieve convenient specific contact resistivity. , to avoid parasitic resistance, the effect of high accuracy
CN102735939AInactive Publication Date: 2012-10-17UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2012-10-17
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a method for measuring ohmic contact resistivity between black silicon material and metal electrodes. The method provided by the technical scheme comprises the following steps of: aiming at the black silicon material which is obtained by etching the mono-crystal silicon surface, depositing at least six dot-shaped metal electrodes on the surface of the black silicon material by adopting the ohmic contact preparation technology; depositing the metal counter electrodes on the back surface of the mono-crystal silicon; leading an ultrafine metal wire from the inner contact cycle of each dot-shaped metal electrode by adopting the hot pressure welding technology; respectively bonding the metal wires on the outer-leading electrodes of which the areas are large; continuously supplying constant reverse voltage bias between each dot-shaped metal electrode and the counter electrode by adopting a variable voltage source so as to ensure that the heterojunction of the black silicon / mono-crystal silicon is completely offset; and under the condition that the heterojunction of the black silicon / mono-crystal silicon is completely offset, testing the contact resistivity of the metal / black silicon by using a dot-shaped transmission line mode method.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor optoelectronic materials and devices, in particular to a method for testing the ohmic contact resistivity of a black silicon material and a metal electrode. Background technique

[0002] Black silicon is a new surface microstructure material obtained by the research team of Professor Mazur of Harvard University when using a femtosecond laser to irradiate the surface of a single crystal silicon wafer in a certain gas environment. This kind of silicon material with quasi-regular arrangement of micron-scale peak structure on the surface has good photoelectric properties, for example: almost all absorption of light from the visible to near-infrared band (250-2500nm), and high responsiveness to incident light; good Field emission, photoluminescence and terahertz radiation characteristics. The excellent photoelectric properties make black silicon materials have great potential application value i...

Claims

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