A kind of growth equipment for growing yvo4 crystals by the upward method and the growth method based on the growth equipment

A growth method, the technology of the induction method, which is applied to the growth equipment of YVO4 crystal growth by the induction method and the growth field based on the growth equipment, which can solve the problems of many impurities, achieve simple process, increase temperature gradient, and good thermal conductivity Effect

Active Publication Date: 2016-12-28
TONGLING RIKE ELECTRONICS
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Problems solved by technology

Large-sized crystals can be obtained by increasing the size of the melting crucible, but as the weight of the crystals increases, more and more impurities are contained in the remaining melt

Method used

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  • A kind of growth equipment for growing yvo4 crystals by the upward method and the growth method based on the growth equipment
  • A kind of growth equipment for growing yvo4 crystals by the upward method and the growth method based on the growth equipment

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Embodiment Construction

[0045] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0046] A growth device for growing YVO4 crystals by the upward method (the crystals mentioned in this embodiment are YVO4 crystals), the device is a furnace body, including a melting crucible (5) and a heating system matching it, and the heating system is a heating radio frequency The coil (9); the seed crystal clamping rod (1) and its matching power system, the power system includes the lead-up motor and the rotating crystal rotating motor that respectively raise a...

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Abstract

The invention provides growing equipment for growing YVO4 (Yttrium Vanadate) crystal with a drawing method and a growing method based on the same. The growing equipment is provided with a temperature control system and a post-heating system, and the temperature control system stably controls a heating system through heating power. In the post-heating system, the upper end of a melting crucible is provided with post-heating metal sheets. In a heat-insulation system, the upper end of the melting crucible is provided with multiple corundum heat-insulation covers. A seed crystal lifting clamping bar penetrates through the post-heating metal sheets and the multiple heat-insulation covers. For the growing method, in the process of temperature rising, at low temperature, the heating power is maintained for a long time; the rate of temperature fall is adjusted under different states in the growing process by combining the lifting speed of the seed crystal clamping bar and the design of a temperature field; and the best temperature rising, constant temperature and temperature fall method of the heat treatment temperature is determined at a later stage. According to the growing equipment and the growing method based on the growing equipment, the YVO4 crystal with high quality and a large size can be provided.

Description

technical field [0001] The invention relates to a growth device for growing YVO4 crystals by an upward method and a growth method based on the growth device. Background technique [0002] There are many techniques for crystal growth, including induction method, temperature gradient method, cosolvent method, molten crucible descent method, heat exchange method, Kyropoulos method, guided mode method, molecular beam epitaxy, etc. Each method is suitable for different Crystals and requirements for crystals. Because of the uniformity of YVO4 melting, it can be grown by primer-up technique. Utilizing the technology of priming method, the crystal growth cycle is short, and large-size high-quality crystals can be obtained in a short time. [0003] In the upward crystal process, the size or weight of high-quality crystals that can be obtained is directly determined by the size of the crucible, that is, the larger the crucible, the more material it contains, and the better the consi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/30
Inventor 张新民陈平
Owner TONGLING RIKE ELECTRONICS
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