High temperature tail gas anti-impact piece adjustable structure of polycrystalline silicon high temperature tail gas heat exchanger

A tail gas heat exchanger technology, applied in the direction of silicon compounds, chemical instruments and methods, inorganic chemistry, etc., can solve the problems that the metal anti-shock plate cannot adjust the gas flow rate, the gas cannot pass through the heat exchange tube uniformly, and the service life is short.

CN103896270AInactive Publication Date: 2014-07-02SHUANGLIANG NEW ENERGY EQUIP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2014-07-02
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a high temperature tail gas anti-impact piece adjustable structure of a polycrystalline silicon high temperature tail gas heat exchanger. The structure comprises a column end cap (1), a spiral hole calandria (2) and a fixing connecting piece (3), wherein the column end cap (1) is in threaded connection with inner holes in one end of the spiral hole calandria (2); the fixing connecting piece (3) is in threaded connection with the other end of the spiral hole calandria (2); a plurality rows of spiral holes are formed in the wall of the spiral hole calandria (2). By adopting the structure, an anti-impact piece is high temperature resisting and corrosion resisting, the flowing speed of a high temperature inlet tail gas can be controlled so as to uniformly distribute the high temperature tail gas, an ideal heat exchange effect is achieved, and the service life of the polycrystalline silicon high temperature tail gas heat exchanger is prolonged.
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Description

technical field

[0001] The invention relates to the field of polysilicon, in particular to an adjustable structure of a high-temperature tail gas anti-shock part of a polysilicon high-temperature tail gas heat exchanger. It belongs to the technical field of polysilicon preparation. Background technique

[0002] Polycrystalline silicon is the direct material for the production of monocrystalline silicon. High-purity polysilicon is the basic material of semiconductor devices such as photoelectric conversion cells and integrated circuits. With the rapid development of the world's semiconductor industry, a large number of applications of ultra-large integrated circuits, and a large demand for photovoltaic cells, the world's demand for polysilicon is increasing year by year.

[0003] In the process of polysilicon production, the exhaust gas outlet temperature of the reduction furnace and other equipment is as high as 1000°C, and it is high-temperature corrosive. In order to red...

Examples

Embodiment Construction

[0024] see figure 1 , figure 1 It is a schematic diagram of the adjustable structure of the high-temperature exhaust gas anti-shock parts of the polysilicon high-temperature exhaust gas heat exchanger of the present invention. Depend on figure 1 It can be seen that the adjustable structure of the high-temperature tail gas anti-shock parts of the polysilicon high-temperature tail gas heat exchanger of the present invention includes a cylindrical plug 1 (see figure 2 and image 3 ), spiral hole pipe 2 (see Figure 4 and Figure 5 ) and fixed connector 3 (see Figure 6 and Figure 7 ), the cylindrical plug 1 is threadedly connected with the inner hole of one end of the spiral hole pipe 2, and the fixed connector 3 is threaded with the inner hole of the other end of the spiral hole pipe 2. The spiral hole pipe 2 is provided on the pipe wall. row of screw holes.

[0025] The spiral hole row pipe 2 is made of graphite.