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A border modification method of graphene nanoribbons based on tip-enhanced Raman spectroscopy

A graphene nanoribbon and needle-tip enhanced Raman technology, applied in the nano field, can solve problems such as reducing carrier mobility, and achieve the effects of easy monitoring and convenient operation

Inactive Publication Date: 2016-03-02
JIANGSU UNIV
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Problems solved by technology

Carbon atoms in graphene are SP 2 configuration, if it is cut, its boundary atomic structure will inevitably be destroyed and dangling bonds will appear, and defects will be introduced in graphene, which will reduce the mobility of carriers in the graphene channel

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  • A border modification method of graphene nanoribbons based on tip-enhanced Raman spectroscopy
  • A border modification method of graphene nanoribbons based on tip-enhanced Raman spectroscopy
  • A border modification method of graphene nanoribbons based on tip-enhanced Raman spectroscopy

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Embodiment Construction

[0015] The present invention will be further described below in conjunction with the accompanying drawings, but the protection scope of the present invention is not limited thereto.

[0016] figure 1 and figure 2 Shown are two boundary structure types of graphene according to the present invention: armchair graphene nanoribbons 1 and zigzag graphene nanoribbons 2 .

[0017] image 3 Shown is a schematic diagram of the implementation of graphene nanoribbon boundary reconstruction based on tip-enhanced Raman spectroscopy (TERS) system. Transferring the graphene nanoribbons 4 with disordered boundaries prepared by the traditional method to the target substrate 3 compatible with the traditional CMOS process, and transferring the graphene nanoribbons 4 with the borders to be modified on the substrate 3, Before modifying the boundary, first ultrasonicate with acetone, absolute ethanol, and deionized water for 3-5 minutes, and then blow dry with nitrogen.

[0018] The tip-enhanc...

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Abstract

The invention discloses a graphene nanoribbon boundary trimming method based on the tip-enhanced Raman spectroscopy. The graphene nanoribbon boundary trimming method based on the tip-enhanced Raman spectroscopy comprises the steps that firstly, a graphene nanoribbon with a boundary to be trimmed is transferred onto a substrate, a silicon nitride cantilever conducting probe is made to be in contact with the graphene nanoribbon, and an electrified probe is directly pressed to the top end of the graphene nanoribbon; the silicon nitride cantilever conducting probe is powered on, the silicon nitride cantilever conducting probe is connected to the electrified probe and bias voltage is exerted so that a loop can be formed, and current is made to pass through the graphene nanoribbon; the boundary of the graphene nanoribbon is scanned with the silicon nitride cantilever conducting probe, the scanning speed is controlled to range from 10 micron / s to 30 micron / s, carbon atoms on the boundary are stimulated through energy and then atom reconstruction is conducted automatically, and a crystalline atomic-scale graphene nanoribbon is generated on the graphene boundary; other defects are prevented from being generated on the graphene nanoribbon on the basis that the boundary of the graphene nanoribbon is reconstructed, operation is convenient, and monitoring can be conducted conveniently during operation.

Description

technical field [0001] The invention belongs to the field of nanotechnology, and in particular relates to a method for modifying the boundary of a graphene nanoribbon based on a tip-enhanced Raman spectroscopy (TERS) system. Background technique [0002] Graphene is a material composed of a single layer of carbon atoms. It has many extremely special physical properties. At room temperature, the electron migration speed in graphene materials is 200 times that of silicon conductors. Previous research has confirmed that carbon nanotubes (cylindrical structures rolled from graphene) have excellent electrical conductivity, but carbon nanotubes with more complex structures are difficult to install inside electronic chips. With the continuous deepening of graphene research, it has become a trend to apply graphene to traditional field effect transistors, and the preparation of graphene-based microelectronic devices and the electrical properties of graphene have become research hotsp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00G01N21/65
Inventor 王权刘帅李允任乃飞刘小颖贲秋程张腾飞
Owner JIANGSU UNIV
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