Storage
system, and three-dimensional memory and method for manufacturing the same. The present disclosure provides a three-dimensional memory and a method for manufacturing the same. The present disclosure also provides a storage
system. The three-dimensional memory according to the present disclosure comprises: a stack structure comprising insulating
layers and gate layers alternately stacked, the stack structure further comprising a step region, the step region comprising a plurality of sub-regions arranged along a first direction, and a
boundary region between any two adjacent sub-regions, each sub-region comprising a plurality of steps arranged along a second direction; in the
boundary region, the intersection of adjacent steps forms a
boundary structure; the first direction and the second direction are perpendicular to the stacking direction of the insulating
layers and the gate layers, respectively; and a gate line slit structure penetrating through the stack structure; wherein part of the gate line slit structure is located in the
boundary region and penetrates through at least one
boundary structure.