7 results about "Boundary structure" patented technology

The present invention relates to a process chamber and a semiconductor processing apparatus relating to the field of semiconductor technology, comprising: a chamber body provided with a liftable and lowerable base, a plurality of ejection needles, and an ejection needle carrier within the chamber body; wherein the base is provided with a plurality of ejection needle holes extending vertically through the base, and wherein the plurality of ejection needles are arranged on the ejection needle carrier and are guided into a plurality of ejection needle holes in a precise correspondence, and wherein a guide element is provided on the lower surface of the base, extending vertically and slidably connected to the ejection needle carrier, the guide element being lifted with the base and able to interact with it upon contact of the ejection needle carrier by the lower end of the guide element.so that the ejection needle carrier and the ejection needle can lift with the guide element. The present invention solves the problems of the prior art in that the upper end surface of the ejection needle is too large, which leads to poor process uniformity in the projected area on a wafer corresponding to the ejection needle, and that the ejection needle with an inverted conical limiting structure is very prone to jamming in the ejection needle holes on the base and is difficult to pull out.

A semiconductor wafer boundary structure includes a first substrate on which a boundary region and a device region are defined, a first material layer covering a first surface and a side surface of the boundary region, and a second material layer covering a second surface and a side surface of the device region. And the second material layer covers the first material layer, and the section structure of the second material layer is gradually reduced in a direction from the element area to the boundary area.

An optoelectronic semiconductor component (1) comprising a substrate (10), a boundary structure (20) and a dam element (30) is described herein. The boundary structure (20) and the dam element (30) are arranged on an upper side (10A) of the substrate (10). The boundary structure (20) comprises a first boundary element (201) and a second boundary element (202). The first and second boundary elements (201, 202) are arranged at a distance (D) from each other. The dam element (30) is arranged between the first boundary element (201) and the second boundary element (202). Furthermore, a method for manufacturing an optoelectronic semiconductor component (1) is disclosed.

Storage system, and three-dimensional memory and method for manufacturing the same. The present disclosure provides a three-dimensional memory and a method for manufacturing the same. The present disclosure also provides a storage system. The three-dimensional memory according to the present disclosure comprises: a stack structure comprising insulating layers and gate layers alternately stacked, the stack structure further comprising a step region, the step region comprising a plurality of sub-regions arranged along a first direction, and a boundary region between any two adjacent sub-regions, each sub-region comprising a plurality of steps arranged along a second direction; in the boundary region, the intersection of adjacent steps forms a boundary structure; the first direction and the second direction are perpendicular to the stacking direction of the insulating layers and the gate layers, respectively; and a gate line slit structure penetrating through the stack structure; wherein part of the gate line slit structure is located in the boundary region and penetrates through at least one boundary structure.

The application discloses a preparation method of eutectoid-like oxide ceramic based on an amorphous crystallization process, which comprises the steps of preparing amorphous powder with specific eutectoid components and crystallizing the amorphous powder. The amorphous powder is prepared by a sol-gel method of metal salt complexation reaction; and the amorphous powder is rapidly hot-pressed and sintered by a joule heat pressing method to crystallize the amorphous powder into a shape, so as to prepare the eutectoid-like oxide ceramic. The joule heat pressing makes the amorphous powder rapidly crystallize, and the crystallization temperature is far lower than the eutectoid temperature; the crystallized grains are mutually nested and wound to form eutectoid structures, and a plurality of grain boundaries formed in the crystallization process due to the particle boundaries of the amorphous powder also exist; the specific binary boundary structure has a strong toughening effect on the mechanical properties; therefore, the eutectoid-like oxide ceramic has excellent mechanical properties.

The embodiment of the invention provides an energetic device base structure and a preparation method thereof. The energetic device base structure comprises a base, a micro-nano pore energetic boundary structure and an energetic material filling body, a plurality of filling holes are formed in the base; the micro-nano pore energetic boundary structure is arranged on the inner surface of the filling hole; the energetic material filling body is filled in the filling hole; wherein the micro-nano pore energetic boundary structure comprises a plurality of micro-nano pores and a strong oxidant crystal substance filled in the micro-nano pores. A micro-nano pore energetic boundary structure is arranged on the surface of a filling hole, the specific surface area and the friction coefficient of the filling hole are greatly increased, micro-nano pores in the micro-nano magnitude are tightly filled with a strong oxidant crystal substance, after thermal excitation, heat can be quickly and effectively added to the micro-nano pore energetic boundary structure at first, rapid detonation is achieved, and the friction coefficient of the filling hole is greatly increased. A large amount of energy is released to detonate the energetic material in the filling hole, so that the detonation response time of the whole device is remarkably shortened, and the power consumption is reduced.

The invention discloses a single crystal / polycrystal single-phase composite structure thin film with magnetoresistance response in a wide temperature range and a preparation method thereof. The preparation method comprises the following steps: preparing an LSMO single crystal thin film with cracks on a target substrate through a water-soluble sacrificial layer technology; and depositing an LSMO thin film with a single-crystal / polycrystal homogeneous composite structure on an LSMO single-crystal thin film with cracks through a pulse laser deposition technology to form a single-crystal / polycrystal single-phase composite structure thin film with wide-temperature-range magnetoresistance response. Two different nucleation sites of an LSMO single crystal film and a non-lattice matching substrate exposed at a crack are introduced on a target substrate, and then high-temperature pulse laser deposition is carried out. A boundary structure is designed, namely, a controllable polycrystalline LSMO thin film is artificially introduced into a high-quality single crystal LSMO thin film, and by means of local spin disorder existing on a polycrystalline grain boundary and the difference of ferromagnetic-paramagnetic transition temperatures of the single crystal LSMO thin film and the polycrystalline LSMO thin film, the response temperature of the magnetoresistor is remarkably widened.