Unlock instant, AI-driven research and patent intelligence for your innovation.

Power transistor arrangement and package with same

A technology of power transistors and transistors, applied in transistors, electro-solid devices, semiconductor devices, etc., can solve problems such as switching loss

Active Publication Date: 2017-04-12
INFINEON TECH AUSTRIA AG
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Discrete components or packages can cause significant package inductance and thus switching losses
Chip-on-a-chip construction can lead to thermal constraints on chips on top (e.g. silicon field effect transistor chips)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power transistor arrangement and package with same
  • Power transistor arrangement and package with same
  • Power transistor arrangement and package with same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and embodiments in which the invention is practiced.

[0013] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment or design described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments or designs.

[0014] The term "over" used with reference to deposited material formed "on" a side or surface may be used herein to mean that it may be "directly on" (eg, in direct contact with) the implied side or surface. ) to form the deposited material. The word "over" used in relation to deposition material formed "over" a side or surface may be used herein to mean Additional layers are used to form the deposited material "indirectly" on the implied sides or surfaces.

[0015] Various embodiments provide low inductance packages for power applicat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Various embodiments of the present invention provide a power transistor arrangement, which may include: a carrier including at least a main region and a first terminal region and a second terminal region, the main region, the first terminal region and the second terminal region being electrically isolated from each other a first power transistor having a control electrode, a first power electrode and a second power electrode, and being arranged on the main area of ​​the carrier such that its first power electrode faces the main area of ​​the carrier and is electrically coupled to the main area of ​​the carrier a second power transistor having a control electrode, a first power electrode and a second power electrode and being arranged on the terminal area of ​​the carrier such that its control electrode and its first power electrode face the terminal area and its control electrode is electrically coupled to the first terminal region and its first power electrode is electrically coupled to the second terminal region.

Description

technical field [0001] Various embodiments relate generally to power transistor arrangements and packages having the same. Background technique [0002] Power semiconductor chips can be integrated into electronic packages for various circuit arrangements. For example, a cascode circuit or a half-bridge circuit may be implemented by discrete components or packages, or by means of a chip-on-chip structure, where diffusion bonding may be used. [0003] Discrete components or packages can result in significant package inductance and thus switching losses. A chip-on-chip structure can lead to thermal constraints with respect to a chip on top (eg a silicon field effect transistor chip). Contents of the invention [0004] Various embodiments provide a power transistor arrangement. The power transistor arrangement may comprise: a carrier comprising at least a main region and a first terminal region and a second terminal region, the main region, the first terminal region and the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L25/18H01L23/31H01L23/367
CPCH01L2224/48091H01L2224/48247H01L2924/13091H01L23/49524H01L23/49562H01L23/49575H01L2924/13062H01L2924/1306H01L2924/13055H01L2924/1305H01L2224/40245H01L2224/37147H01L24/40H01L2224/73221H01L24/37H01L2924/00014H01L27/088H01L2224/0603H01L2924/1033H01L2924/00H01L2224/84H01L2924/00012H01L25/071H01L23/49844H01L25/072H01L24/34
Inventor R·奥特雷姆巴J·赫格劳尔J·施雷德尔X·施勒格尔K·希斯
Owner INFINEON TECH AUSTRIA AG