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R-T-B based permanent magnet

A R-T-B, R1-T-B technology, applied in the direction of magnetic materials, magnetic objects, magnetic films, etc., can solve problems such as difficult to replace

Active Publication Date: 2014-10-29
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the residual magnetic flux density of the Y-T-B permanent magnet disclosed in Patent Document 2 is about 0.5-0.6T, and the coercive force is about 250-350kA / m, which are significantly lower than the magnetic properties of the Nd-T-B permanent magnet. The Y-T-B permanent magnet disclosed in Document 2 is difficult to replace the existing Nd-T-B permanent magnet

Method used

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Embodiment

[0048] Hereinafter, although the content of this invention is demonstrated in detail using an Example and a comparative example, this invention is not limited to the following Example.

[0049] As a target, made so that the film formed by sputtering becomes Nd 15 Fe 78 B 7 、Pr 15 Fe 78 B 7 , Y 15 Fe 78 B 7 The Nd-Fe-B alloy target material, Pr-Fe-B alloy target material and Y-Fe-B alloy target material adjusted in the way of composition. A silicon substrate was prepared as a base material to be formed into a film. Conditions were set such that the size of the target was 76.2 mm in diameter, the size of the substrate was 10 mm×10 mm, and the in-plane uniformity of the film was sufficiently maintained.

[0050] The film forming device can be exhausted to 10 -8 A device below Pa that has multiple sputtering mechanisms in the same tank. The above-mentioned Nd—Fe—B alloy target material, Pr—Fe—B alloy target material, Y—Fe—B alloy target material, base film, and Mo targe...

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Abstract

The present invention provides a permanent magnet which is excellent in the temperature properties and the magnetic properties of which will not be significantly decreased, compared to the conventional R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Y-T-B based crystal layer can be formed by alternatively stacking R1-T-B and Y-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the temperature coefficient of the Y-T-B based crystal layer can be improved.

Description

technical field [0001] The present invention relates to a rare earth permanent magnet, and in particular to a permanent magnet obtained by selectively substituting a part of R with Y in an R-T-B permanent magnet. Background technique [0002] known as tetragonal R 2 T 14 The R-T-B system permanent magnet (R is a rare earth element, T is Fe or a part of which is replaced by Co) with B compound as the main phase has excellent magnetic properties, and since the invention in 1982 (Patent Document 1: Japanese Patent Laid-Open Zhao 59-46008 bulletin) is a representative high-performance permanent magnet. [0003] In particular, R-T-B permanent magnets in which the rare earth element R is composed of Nd, Pr, Dy, Ho, and Tb have a large anisotropic magnetic field Ha and are widely used as permanent magnet materials. Among them, the Nd-Fe-B permanent magnet whose rare earth element R is Nd has a good balance of saturation magnetization Is, Curie temperature (Curie temperature) Tc,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/057
CPCH01F1/057H01F10/126
Inventor 桥本龙司铃木健一崔京九西川健一
Owner TDK CORPARATION