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A cmos up-conversion circuit with DC bias conversion structure

A frequency conversion circuit and DC bias technology, applied in the field of electronic communication, can solve problems such as difficult coordination of intermediate frequency signals, and achieve the effect of preventing oscillation

Inactive Publication Date: 2017-03-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In order to solve the problem that it is difficult to coordinate the front-end digital low-frequency signal bias and the intermediate frequency signal bias required by the up-converter mixing circuit in the existing transmitter structure, the present invention provides a CMOS on-board converter with a DC bias conversion structure Frequency conversion circuit

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  • A cmos up-conversion circuit with DC bias conversion structure
  • A cmos up-conversion circuit with DC bias conversion structure
  • A cmos up-conversion circuit with DC bias conversion structure

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no. 1 example

[0045] like image 3 Shown is the first embodiment of the present invention, a CMOS up-conversion circuit with a DC bias conversion structure in this embodiment includes: a DC bias conversion circuit and an up-conversion circuit; the DC bias conversion circuit includes a first Transistor M1, second transistor M2, third transistor M3, fourth transistor M4, fifth transistor M5, sixth transistor M6, seventh transistor M7, eighth transistor M8, ninth transistor M9, tenth transistor M10, tenth A transistor M11, a twelfth transistor M12, a first capacitor C1, a second capacitor C2, and a first resistor R1, M1, M2, and M3 form a first current bias, M10, M11, and M12 form a second current bias, and M6 , M7 form a common source amplifier, M8, M9 form a source follower, M4, M5 form a signal output circuit; the up-conversion circuit includes a thirteenth transistor M13, a fourteenth transistor M14, a fifteenth transistor M15, and a sixteenth transistor M16, the seventeenth transistor M1...

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Abstract

The invention discloses a CMOS up-conversion circuit with a DC bias conversion structure. The circuit is equipped with a DC bias conversion circuit for the traditional up-conversion circuit. The DC bias conversion circuit includes twelve MOS tubes and two capacitors. One, one resistor, wherein, the first to third MOS tubes and the tenth to twelfth MOS tubes respectively provide current bias for the corresponding MOS tubes, the sixth and seventh MOS tubes constitute a common source amplifier, the eighth and ninth MOS tubes form a common source amplifier, The MOS transistor constitutes a source follower, the fourth and fifth MOS transistors constitute a signal output circuit, and the grid thereof is connected to the input end of the up-conversion circuit as the output end of the DC bias conversion circuit. The invention converts the current of the low-frequency intermediate frequency signal through common source amplification, and moves the DC bias through the source follower method. This solution solves the contradiction that the bias between the traditional mixer and the front-end DAC is difficult to coordinate , In addition, the two capacitors in the circuit also compensate the phase margin to prevent the occurrence of oscillation.

Description

technical field [0001] The invention belongs to the technical field of electronic communication, and in particular relates to a CMOS up-conversion circuit with a DC bias conversion structure. Background technique [0002] A Complementary Metal Oxide Semiconductor (CMOS) transistor is a voltage controlled current device. Due to its excellent characteristics such as high integration, low cost, and mature technology, it has become the primary technology choice for designing logic circuits and high-frequency analog circuits. And in recent years, due to the continuous improvement of the technology and the continuous reduction of the channel length, the working speed of the device has been continuously increased, and it can be widely used at a higher frequency. It is this excellent feature that makes it gain a very high market share in the transceiver system that requires more and more high integration. [0003] CMOS transistors can be divided into three types: cut-off region, l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03D7/16
Inventor 张铁笛王磊邹盼希徐锐敏
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA