Voltage detection device

Abstract

The invention provides a voltage detection device. The device comprises a detection element, an induction device, a detection device body, a processing device and an output device. The detection element further comprises a semiconductor element, a potential component and an induction component; the two ends of the induction device are in series connection with one positive electrode end and one negative electrode end of the detection element; the induction device further comprises a circuit through which a third terminal is connected to the detection device body; the detection device body further comprises a damping circuit and a capacitor used for detecting electric potential energy; signals output by the detection device body enter the processing device to be converted, and the converted readable signals are output by the output device; the output device further comprises a driving unit and a signal switching device. According to the device, readable and visible electronic signal output information can be obtained in a short time, convenience and cost saving are achieved, and the voltage detection device is simple and easily achieves the function of voltage detection.

Description

technical field [0001] The invention belongs to a voltage detection device, in particular to a voltage detection device for conductive elements. Background technique [0002] In the existing semiconductor technology, a multilayer metal interconnection structure is usually used to electrically connect various devices, and the metal interconnections are electrically isolated by dielectric materials with good insulating properties. The reliability of the multilayer metal interconnection structure is crucial to the overall IC manufacturing process yield, product performance and reliability. Through reliability testing, the spacing, shape and different dielectric materials of different metal interconnection lines can be obtained. Effects on the breakdown characteristics of metal interconnect structures. In order to obtain a metal interconnect structure with better breakdown characteristics, it is usually necessary to detect multiple groups of metal interconnect structures with d...

AI Technical Summary

Problems solved by technology

In order to obtain a metal interconnect structure with better breakdown characteristics, it is usually necessary to detect multiple groups of metal interconnect structures with different metal interconnect line spacing, shape or different dielectric materials. If the existing detection method is used, only one group The corresponding breakdown voltage or breakdown time is detected in groups to obtain the influence of different metal interconnection spacing, shape or different dielectric materials on the breakdown characteristics of the metal interconnection structure. The detection time is longer and the detection cost is higher.

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