Sensitive amplifier and memory

Abstract

The invention provides a sense amplifier and a memorizer. The sense amplifier comprises at least following parts: a first current branch containing a memory cell to be read; a second current branch containing a combination circuit composed of a plurality of circuits similar to a circuit adopted by the memory cell; and a comparator, wherein one input terminal of the comparator is connected with the memory cell to be read, and the other input terminal is connected with the combination circuit, and the comparator is used for amplifying and outputting difference of voltage drop of the memory cell with voltage drop of the combination circuit. And in addition, the corresponding memorizer can be constructed based on the sense amplifier. Advantages are that: reading voltage dynamic range is relatively large, and influences caused by technology, power supply voltage, and temperature (PVT) are few.

Description

technical field [0001] The invention relates to the field of storage circuits, in particular to a sensitive amplifier and a memory. Background technique [0002] A sense amplifier (sense amplifier, SA) is an important component in a memory, and is used to read data stored in each storage unit in the memory. The structures of the sense amplifiers used by different types of memories are not exactly the same. [0003] For example, in the Chinese patent application document with application number 201110211607.0, a sense amplifier applied to SRAM is disclosed. Among them, the storage unit in the SRAM adopts a six-transistor configuration. When reading data, the corresponding storage unit of the SRAM outputs a pair of complementary signals on the bit lines BL and BLb respectively, and the sense amplifier performs differential amplification on the complementary signals and outputs them. In order to improve the speed of the sense amplifier, the sense amplifier adopts a cross-coup...

AI Technical Summary

Problems solved by technology

In some sense amplifiers that use a current source to provide reference current to the reference branch, since the bias voltage used by the current source usually comes from a bandgap reference voltage source or directly uses an external power supply voltage as its bias voltage, Different from the bias voltage used by each memory cell during the read operation, because the error range of the two bias voltages is different, and the bandgap reference voltage source or the external power supply voltage is easily affected by the process, temperature, and temperature (ie PVT), therefore, it is easy to affect the accuracy of data reading; therefore, it is necessary to improve the existing structure of this type of sensitive amplifier

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