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Method and device for triggering operation in data storage flash memory

A data storage and trigger operation technology, applied in information storage, static memory, read-only memory, etc., can solve the problem of limiting the application scope of data storage type flash memory, and achieve the effect of expanding the application scope and overcoming the limitation requirements.

Active Publication Date: 2019-05-07
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This difference in output signal will limit the application range of data storage type flash memory

Method used

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  • Method and device for triggering operation in data storage flash memory
  • Method and device for triggering operation in data storage flash memory
  • Method and device for triggering operation in data storage flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] figure 1 It is a flow chart of a method for triggering an operation in a data storage type flash memory provided by an embodiment of the present invention.

[0028] like figure 1 As shown, a method for triggering operations in a data storage type flash memory (hereinafter referred to as flash memory), comprises the following steps:

[0029] 101. Obtain an operation enable signal through an internal circuit of the flash memory.

[0030] Wherein, the operation enable signal includes a read enable signal or a write enable signal. It is worth noting that the read enable signal is loaded from the external read signal to the internal circuit of the flash memory and obtained after processing; while the write enable signal is loaded from the external write signal to the internal circuit of the flash memory and obtained after processing of.

[0031] 102. Obtain a delay signal corresponding to the operation enable signal through the delay module. The length of the delay time...

Embodiment 2

[0039] figure 2 is a timing diagram of a method for triggering operations in a data storage flash memory provided by an embodiment of the present invention.

[0040] Depend on figure 2 As shown, taking the operation enable signal as the read enable signal REB as an example, the method for triggering operation in the data storage flash memory of the present invention can be understood as:

[0041] First, the external read-in signal passes through the internal circuit of the flash memory to generate a corresponding read enable signal REB. Moreover, the read enable signal is in a high level state in an initial state.

[0042] The read enable signal REB passes through the delay module in the internal circuit of the flash memory to obtain the delay signal B of the read enable signal. It should be pointed out here that the delay time of the delay signal B is set according to the internal delay module of the flash memory.

[0043] When the read enable signal REB flips from a hi...

Embodiment 3

[0048] image 3 It is a schematic structural diagram of a device for triggering operations in a data storage flash memory provided by an embodiment of the present invention.

[0049] Depend on image 3 As shown, a device for triggering operations in a data storage type flash memory includes an operation enabling module 301, a delay module 302, a control signal module 303, and a signal recovery module 304;

[0050] Wherein, the operation enabling module 301 is used for obtaining the operation enabling signal REB / WEB through the internal circuit of the flash memory. The operation enable signal here includes a read enable signal REB and a write enable signal WEB.

[0051] The delay module 302 is configured in the internal circuit of the data storage type flash memory, and is used for obtaining the delay signal B corresponding to the operation enable signal REB / WEB. Here, the delay module 302 comes from the internal circuit of the flash memory, and is used to delay the operatio...

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Abstract

The invention provides a method and a device for triggering operation in an information storage type flash memory. The method comprises the following steps: obtaining an operation enable signal through an internal circuit of the flash memory; obtaining a time delay signal corresponding to the operation enable signal through a time delay module; triggering overturn through the operation enable signal, and triggering a corresponding control signal to be overturned; triggering the overturn through the time delay signal, and triggering the control signal to be overturned and restored to an initial state. By adding delay control to the operation enable signal, the aim of regulating the overturn and the restoration of the control signal can be further achieved, so that the limitation requirement on the operation enable signal caused by the internal circuit in the information storage type flash memory is eliminated, and the application range of the information storage type flash memory is expanded.

Description

technical field [0001] The invention relates to the technical field of memory read and write operations, in particular to a method and device for triggering operations in a data storage type flash memory. Background technique [0002] With the continuous development of electronic products, chip technology is also undergoing tremendous changes. As a kind of flash memory, data storage flash memory provides a cheap and effective solution for the realization of solid-state large-capacity memory due to its internal nonlinear macro-cell mode. Data storage flash memory has the advantages of large capacity and fast rewriting speed, and is suitable for storing large amounts of data, so it has been more and more widely used in the industry. For example, embedded products include digital cameras, MP3 walkman memory cards, Small and exquisite U disk, etc. [0003] However, data storage flash memory also has certain deficiencies in its application field. Since different products have ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
Inventor 苏志强丁冲谢瑞杰陈立刚
Owner GIGADEVICE SEMICON (BEIJING) INC
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