A light trapping structure and a manufacturing method thereof and a thin-film solar cell having the structure

Abstract

The invention relates to a light trapping structure and a manufacturing method thereof and a thin-film solar cell having the structure. The light trapping structure comprises a two-dimension right-angle rectangular-pyramid light-trapping silicon layer (4). The two-dimension right-angle rectangular-pyramid light-trapping silicon layer (4) is formed by a two-dimension right-angle rectangular-pyramid array in micro-nano period and non-fully symmetrical, wherein the shape of the two-dimension right-angle rectangular-pyramid of a single period is characterized in that the bottom surface is in a square shape, one edge is vertical to the bottom surface, the two side surfaces adjacent to the edge are vertical to the bottom surface, and the other two side surfaces are inclined to the bottom surface. The light trapping structure has the characteristics of higher coupling property, better broadband spectrum absorption and good angle sensitivity; and absorption enhancement effect is better than that of the structure of a conventional inverted pyramid and the like.

Description

technical field [0001] The invention relates to a light-trapping structure, a manufacturing method thereof and a thin-film solar cell using the structure. Background technique [0002] In recent years, with the progress of science and technology and the development of economy, the demand for energy in various countries is increasing, and non-renewable energy sources such as electricity, coal, and oil are frequently in urgent need, which promotes the rapid development of the photovoltaic industry. The core device of solar photovoltaic power generation is solar cells. Silicon solar cells occupy a dominant position in solar cells due to their wide range of sources and low cost. At present, solar cells mainly include crystalline silicon solar cells and thin film solar cells. Compared with crystalline silicon solar cells, thin-film solar cells have the advantages of low cost, large-area production, and better low-light performance. However, since the thickness of the absorbing ...

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Problems solved by technology

However, the preparation method of wet etching often also forms disordered structures

Although random and disordered light-trapping structures can obtain absorption growth in a wide spectral range, it is difficult to achieve maximum enhanced absorption due to structural disorder.

In order to arrange the nanostructures in an orderly manner, they used a combination of mask photolithography and wet etching, but this method is only applicable to single crystal silicon solar cells

[0004] On the whole, the range of spectral absorption that can be achieved by using disordered structures or pyramids in existing technologies is limited, the absorption efficiency is not high, the manufacturing process is complicated, and the cost is also high

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