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GaAs single quantum well-based THz detector implementation method

A technology of a terahertz detector and a realization method, which is applied in the optical field, can solve the problem that the detector has no frequency resolution capability, etc., and achieves the effects of high sensitivity, high sensitivity, and a wide measurement frequency range

Inactive Publication Date: 2016-04-20
FUZHOU UNIV
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  • Abstract
  • Description
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Problems solved by technology

Such detectors usually have no frequency resolution

Method used

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  • GaAs single quantum well-based THz detector implementation method
  • GaAs single quantum well-based THz detector implementation method
  • GaAs single quantum well-based THz detector implementation method

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0026] This embodiment provides a method for realizing a gallium arsenide single quantum well-based terahertz detector, which specifically includes the following steps:

[0027] Step S1: Prepare gallium arsenide detector, such as figure 1 As shown, the gallium arsenide detector includes a GaAs single quantum well sample 1, and the surface 1 of the GaAs single quantum well sample is covered with a meandering Hall bar 2 (wherein figure 2 is an equivalent linear Hall bar schematic diagram), the upper left end and the lower left end of the Hall bar 2 are respectively provided with a metal electrode 1 (3) and a metal electrode 3 (5), and the upper right end of the Hall bar 2 , and the lower part of the right end are respectively provided with a metal electrode 2 (4) and a metal electrode 4 (6); the meandering structure can provide a large aspect ratio and ...

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Abstract

The invention relates to a GaAs single quantum well-based THz detector implementation method. A GaAs detector comprises a GaAs single quantum well sample. A zig-zag-shaped hall strip is covered onto the upper surface of the GaAs single quantum well sample. The upper part of the left end of the hall strip and the lower part of the left end of the hall strip are respectively provided with a metal electrode 1 and a metal electrode 3. The upper part of the right end of the hall strip and the lower part of the right end of the hall strip are respectively provided with a metal electrode 2 and a metal electrode 4. According to the technical scheme of the invention, an incident Terahertz signal is converted into a voltage signal. The method belongs to the technical field of the direct detection technology. Meanwhile, the detector is high in frequency resolution property and high in sensitivity.

Description

technical field [0001] The invention relates to the field of optics, in particular to a realization method of a gallium arsenide single quantum well-based terahertz detector. Background technique [0002] Hertzian waves are electromagnetic waves with a frequency in the range of 0.1-10THz (1THz=1012Hz). Its corresponding wavelength range is 3mm-30um, and the wave band is between traditional microwave and infrared. Terahertz wave photon energy is low, and background thermal noise usually occupies a prominent position, so it is difficult to detect. Compared with mature detection technologies in other bands, the research on terahertz detectors is still in the exploratory stage. At present, terahertz signal detection technology can be divided into pulse time domain detection, continuous wave coherent detection, and direct detection technology in principle. Pulsed time-domain detection can obtain amplitude and phase information at the same time, but usually requires a femtosecon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42
CPCG01J1/42
Inventor 王向峰吴经纶陈硕钟舜聪
Owner FUZHOU UNIV
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