A terahertz quantum cascade laser with integrated absorption waveguide and its manufacturing method
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A technology of quantum cascade and fabrication method, which is applied in semiconductor lasers, lasers, phonon exciters, etc., can solve the problems such as the large difference between the materials used and THzQCL, the inability to use integrated systems, etc., to improve the absorption efficiency, and the preparation process is simple and flexible. , the effect of high waveguide loss
Active Publication Date: 2019-03-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a terahertz quantum cascade laser with integrated absorbing waveguide and its manufacturing method, which is used to solve the problem that the THz wave absorbing devices in the prior art are all discrete devices, and The use of materials is quite different from THz QCL, and it cannot be used in on-chip integrated systems based on THz QCL materials
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Embodiment 1
[0083] Such as Figure 1 to Figure 9 As shown, the terahertz quantum cascade laser with integrated absorption waveguide includes:
[0084] Semi-insulating GaAs substrate 1a;
[0085] a GaAs buffer layer 2 located on the upper surface of the semi-insulating GaAs substrate 1a;
[0086] An n-type heavily doped lower contact layer 4 located on the surface of the GaAs buffer layer 2;
[0087] The active region 5 located on the surface of the n-type heavily doped lower contact layer 4;
[0088] An n-type heavily doped upper contact layer 6 located on the surface of the active region 5;
[0089] The first and second upper electrode metal layers 7a and 7b are located on the surface of the n-type heavily doped upper contact layer 6 and are separated by a distance L, wherein the second upper electrode metal layer 7b can be formed after annealing. The upper electrode metal layer of the waveguide loss;
[0090] And the lower electrode metal layer 8 located on the surface of the n-typ...
Embodiment 2
[0127] The present invention also provides a terahertz quantum cascade laser with an integrated absorption waveguide. The terahertz quantum cascade laser with an integrated absorption waveguide includes:
[0128] doped GaAs substrate 1b;
[0129] a bonding metal layer 3 located on the upper surface of the doped GaAs substrate 1b;
[0130] An n-type heavily doped lower contact layer 4 located on the surface of the bonding metal layer 3;
[0131] The active region 5 located on the surface of the n-type heavily doped lower contact layer 4;
[0132] An n-type heavily doped upper contact layer 6 located on the surface of the active region 5;
[0133] And the first and second upper electrode metal layers 7a, 7b located on the surface of the n-type heavily doped upper contact layer 6 and provided with a distance L, wherein the second upper electrode metal layer 7b can be formed after annealing High waveguide loss top electrode metal layer.
[0134] It should be noted that the fir...
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Abstract
The invention provides a terahertz quantum level cascaded laser with integration of an absorption waveguide and a fabrication method of the terahertz quantum level cascaded laser. The terahertz quantum level cascaded laser comprises a semi-insulation GaAs substrate, a GaAs buffer layer, an n-type heavily-doping lower contact layer, an active region, an n-type heavily-doping upper contact layer, a first upper electrode metal layer, a second upper electrode metal layer and a lower electrode metal layer, wherein the GaAs buffer layer is arranged on the upper surface of the semi-insulation GaAs substrate, the n-type heavily-doping lower contact layer is arranged on the surface of the GaAs buffer layer, the active region is arranged on the surface of the n-type heavily-doping lower contact layer, the n-type heavily-doping upper contact layer is arranged on the surface of the active region, the first upper electrode metal layer and the second upper electrode metal layer are arranged on the surface of the n-type heavily-doping upper contact layer and are arranged at spacing distance of L, the second upper electrode metal layer is an upper electrode metal layer capable of high-waveguide loss after annealing, and the lower electrode metal layer is arranged on the surface of the n-type heavily-doping lower contact layer and on the two sides of the active region. With the terahertz quantum level cascaded laser with integration of the absorption waveguide and the fabrication method of the terahertz quantum level cascaded laser, provided by the invention, the problems that THz absorbers are discrete devices and the used materials are highly different from THz QCL so that the THz absorbers cannot be used in an on-chip integration system based on a THz OQL material in the prior art are solved.
Description
technical field [0001] The invention relates to the technical field of laser semiconductors, in particular to a terahertz quantum cascade laser integrated with an absorption waveguide and a manufacturing method thereof. Background technique [0002] Terahertz (THz) wave refers to a section of electromagnetic wave with a frequency between 100GHz and 10THz, which is between microwave and infrared wave. In terms of energy, the photon energy of THz waves covers the characteristic energy of semiconductors and plasmas, and also matches the rotation and vibration energies of organic and biological macromolecules, so it can be used in material detection, environmental monitoring and other fields; from the frequency domain From the looks of it, the frequency of THz waves is high, which is suitable for space security communication and high-speed signal processing and other fields; in addition, THz waves can penetrate a variety of non-conductive materials, such as plastics, wood, paper...
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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/042H01S5/323
CPCH01S5/0425H01S5/323
Inventor 徐天鸿曹俊诚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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