A kind of preparation method of gap rough surface of quaternary chip

A rough surface, chip technology, applied in the field of optoelectronics, can solve the problems of not easy to corrode, GaP is not easy to corrode, etc., to achieve stable quality, improve quality, and improve the effect of light extraction efficiency

Active Publication Date: 2018-08-17
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The invention solves the problem in the prior art that the GaP is not easily corroded and conventional chemical corrosion cannot obtain a stable rough surface on the GaP surface. The method obtains a GaP surface with cavities and defects by sandblasting the GaP surface, and then The surface of GaP is roughened by conventional chemical etching method, which solves the problem that GaP is not easy to corrode, obtains a stable rough surface, and improves the light extraction efficiency

Method used

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  • A kind of preparation method of gap rough surface of quaternary chip
  • A kind of preparation method of gap rough surface of quaternary chip
  • A kind of preparation method of gap rough surface of quaternary chip

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Embodiment 1

[0036] A method for preparing a GaP rough surface of a quaternary chip, comprising sequentially performing sandblasting roughening treatment and wet etching treatment on the GaP surface 3 to obtain a GaP rough light-emitting surface 7, the roughness range of the GaP rough light-emitting surface 7 : 0.5 μm<Ra<2 μm.

Embodiment 2

[0038] A method for preparing a GaP rough surface of a quaternary chip as described in Example 1, the difference is that the grit used in the sand blasting roughening treatment is: silicon carbide particles with a diameter of 12500 mesh to 15000 mesh.

Embodiment 3

[0040] The preparation method of the GaP rough surface of a kind of quaternary chip as described in embodiment 2, its difference is, described GaP surface is roughened by sandblasting 5-20 minutes, the included angle of sandblasting normal line and described GaP surface 70-90°, sandblasting speed 0.125-0.5cm / min, sandblasting grit density 0.5-2g / cm 2 .

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Abstract

A method for preparing a GaP rough surface of a quaternary chip, comprising sequentially performing sandblasting roughening treatment and wet etching treatment on the GaP surface to obtain a GaP rough light-emitting surface, and the roughness range of the GaP rough light-emitting surface: 0.5 μm <Ra<2μm. The present invention obtains a GaP surface with cavities and defects by sandblasting the GaP surface, and then roughens the GaP surface by a conventional chemical corrosion method, which solves the problem that GaP is not easy to corrode, and obtains a more stable GaP rough light-emitting surface , which improves the light extraction efficiency of the quaternary chip. The method is simple to operate, easy to carry out large-scale production, better improves the quality of the chip, and stabilizes the quality of the chip.

Description

technical field [0001] The invention relates to a method for preparing a GaP rough surface of a quaternary chip, belonging to the technical field of optoelectronics. Background technique [0002] In the 1950s, with the efforts of many well-known research institutions represented by IBM Thomas J. Watson Research Center, III-V semiconductors represented by GaAs rose rapidly in the field of semiconductor light emitting. Later, with the emergence of metal-organic chemical vapor deposition (MOCVD) technology, the growth of high-quality III-V semiconductors broke through the technical barriers, and semiconductor light-emitting diode devices with various wavelengths flooded into the market one after another. Compared with the current light-emitting devices, semiconductor light-emitting diodes have the characteristics of high efficiency, long life, and strong mechanical shock resistance, and are regarded as a new generation of lighting devices worldwide. However, due to the general...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L33/00
CPCH01L33/0066H01L33/22
Inventor陈康李晓明申加兵刘琦
OwnerSHANDONG INSPUR HUAGUANG OPTOELECTRONICS