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Method for manufacturing GaP rough surface of four-element chip

A rough surface, chip technology, applied in the field of optoelectronics, can solve the problems of GaP not easy to corrode, not easy to corrode, etc., to achieve the effect of improving quality, stable quality and simple operation

Active Publication Date: 2016-08-24
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The invention solves the problem in the prior art that the GaP is not easily corroded and conventional chemical corrosion cannot obtain a stable rough surface on the GaP surface. The method obtains a GaP surface with cavities and defects by sandblasting the GaP surface, and then The surface of GaP is roughened by conventional chemical etching method, which solves the problem that GaP is not easy to corrode, obtains a stable rough surface, and improves the light extraction efficiency

Method used

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  • Method for manufacturing GaP rough surface of four-element chip
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  • Method for manufacturing GaP rough surface of four-element chip

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Embodiment 1

[0036] A method for preparing a GaP rough surface of a quaternary chip, comprising sequentially performing sandblasting roughening treatment and wet etching treatment on the GaP surface 3 to obtain a GaP rough light-emitting surface 7, the roughness range of the GaP rough light-emitting surface 7 : 0.5 μm<Ra<2 μm.

Embodiment 2

[0038] A method for preparing a GaP rough surface of a quaternary chip as described in Example 1, the difference is that the grit used in the sand blasting roughening treatment is: silicon carbide particles with a diameter of 12500 mesh to 15000 mesh.

Embodiment 3

[0040] The preparation method of the GaP rough surface of a kind of quaternary chip as described in embodiment 2, its difference is, described GaP surface is roughened by sandblasting 5-20 minutes, the included angle of sandblasting normal line and described GaP surface 70-90°, sandblasting speed 0.125-0.5cm / min, sandblasting grit density 0.5-2g / cm 2 .

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Abstract

The invention discloses a method for manufacturing the GaP rough surface of a four-element chip, and the method comprises the steps: sequentially carrying out the abrasive blasting and roughening processing and wet etching processing of the GaP surface, so as to obtain a GaP rough light-emitting surface, wherein the roughness range (Ra) of the GaP rough light-emitting surface is greater than 0.5 microns and less than 2 microns. The GaP surface with a hole and defects is obtained through the abrasive blasting of the GaP surface, and then is roughened through a conventional chemical corrosion method, thereby solving a problem that GaP is not liable to be corroded, obtaining the more stable GaP rough light-emitting surface, and improving the light-emitting surface of the four-element chip. The method is simple in operation, is easy for large-scale production, improves the quality of the chip, and stabilizes the quality of the chip.

Description

technical field [0001] The invention relates to a method for preparing a GaP rough surface of a quaternary chip, belonging to the technical field of optoelectronics. Background technique [0002] In the 1950s, with the efforts of many well-known research institutions represented by IBM Thomas J. Watson Research Center, III-V semiconductors represented by GaAs rose rapidly in the field of semiconductor light emitting. Later, with the emergence of metal-organic chemical vapor deposition (MOCVD) technology, the growth of high-quality III-V semiconductors broke through the technical barriers, and semiconductor light-emitting diode devices with various wavelengths flooded into the market one after another. Compared with the current light-emitting devices, semiconductor light-emitting diodes have the characteristics of high efficiency, long life, and strong mechanical impact resistance, and are regarded as a new generation of lighting devices worldwide. However, due to the genera...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/0066H01L33/22
Inventor 陈康李晓明申加兵刘琦
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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