Method for manufacturing GaP rough surface of four-element chip

Abstract

The invention discloses a method for manufacturing the GaP rough surface of a four-element chip, and the method comprises the steps: sequentially carrying out the abrasive blasting and roughening processing and wet etching processing of the GaP surface, so as to obtain a GaP rough light-emitting surface, wherein the roughness range (Ra) of the GaP rough light-emitting surface is greater than 0.5 microns and less than 2 microns. The GaP surface with a hole and defects is obtained through the abrasive blasting of the GaP surface, and then is roughened through a conventional chemical corrosion method, thereby solving a problem that GaP is not liable to be corroded, obtaining the more stable GaP rough light-emitting surface, and improving the light-emitting surface of the four-element chip. The method is simple in operation, is easy for large-scale production, improves the quality of the chip, and stabilizes the quality of the chip.

Description

technical field [0001] The invention relates to a method for preparing a GaP rough surface of a quaternary chip, belonging to the technical field of optoelectronics. Background technique [0002] In the 1950s, with the efforts of many well-known research institutions represented by IBM Thomas J. Watson Research Center, III-V semiconductors represented by GaAs rose rapidly in the field of semiconductor light emitting. Later, with the emergence of metal-organic chemical vapor deposition (MOCVD) technology, the growth of high-quality III-V semiconductors broke through the technical barriers, and semiconductor light-emitting diode devices with various wavelengths flooded into the market one after another. Compared with the current light-emitting devices, semiconductor light-emitting diodes have the characteristics of high efficiency, long life, and strong mechanical impact resistance, and are regarded as a new generation of lighting devices worldwide. However, due to the genera...

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