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Resistive memory element and manufacturing method thereof

A technology of resistive memory and manufacturing method, which is applied in the direction of electrical components, electric solid-state devices, semiconductor devices, etc., and can solve the problem of reducing the reliability of electronic characteristics of resistive memory elements, metal layer 14 seams 14a and holes 14b, resistance Value variation and other issues

Active Publication Date: 2018-12-07
MACRONIX INT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the traditional metal filling step, it is easy to generate defects such as seams 14a and voids 14b in the metal layer 14, especially in the central part of the metal layer 14.
Defects such as seams 14a and / or voids 14b will cause weaker regions (weaker regions) inside the metal layer 14 (for example, the region where the seams are generated is more likely to be oxidized than other regions of the metal layer 14), after the oxidation process The resistance value of the weaker area will vary, thereby reducing the reliability of the electrical characteristics of the resistive memory element

Method used

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  • Resistive memory element and manufacturing method thereof
  • Resistive memory element and manufacturing method thereof
  • Resistive memory element and manufacturing method thereof

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Embodiment Construction

[0044] The embodiment of the present invention provides a resistive memory element and a manufacturing method thereof. The resistive memory element of the embodiment can be widely applied to various resistive memory (for example, variable resistive memory, ReRAM) arrays. According to the embodiment, the resistive memory element provides a simple and reliable structure to reduce the size of the contact hole (ie, ring-shaped metal oxide), and improve the electrical characteristics of the resistive memory element. Furthermore, the resistive memory element of the embodiment shows high initial resistance, which represents that the embodiment has a good and uniform oxide.

[0045] It should be noted that the present invention does not show all possible embodiments, and other implementation aspects not proposed in the present invention may also be applied. Furthermore, the size ratios in the drawings are not drawn in proportion to the actual products. Therefore, the contents of the de...

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Abstract

The present invention discloses a resistive memory element and a manufacturing method thereof. The resistive memory element comprises a bottom electrode; a patterned dielectric layer possessing a via hole and formed on the bottom electrode; a barrier layer formed on the side wall and the bottom surface of the via hole as a lining; a ring-shaped metal layer formed on the side wall and the bottom surface of the barrier layer; and a ring-shaped metal oxide formed on the upper surface of the ring-shaped metal layer.

Description

Technical field [0001] The present invention relates to a resistive memory element and its manufacturing method, and more particularly to a resistive memory element with improved electronic characteristics and its manufacturing method. Background technique [0002] Memory elements, such as non-volatile memory elements, are generally designed to retain the integrity of the data state when the memory element loses or removes power. At present, many different types of non-volatile memory devices have been proposed in the industry. However, related industries are still constantly developing new designs or combining existing technologies to stack memory cell planes to achieve a memory device structure with higher storage capacity. For example, some three-dimensional stacked NAND flash memory structures have been proposed. [0003] Resistive random-access memory (RRAM or ReRAM) is one type of non-volatile memory. Resistive memory has attracted a lot of attention due to its simple meta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 林昱佑李峰旻蒋光浩李明修
Owner MACRONIX INT CO LTD