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Field-effect transistor driver

A field effect transistor and driver technology, applied in the field of field effect transistor drivers, can solve the problem that FET drivers cannot be used as PhotoMOS or solid state relays

Active Publication Date: 2017-03-08
HONEYWELL INT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, standard FET drivers cannot be used as a replacement for PhotoMOS or solid state relays for applications where DC cannot be added to the field

Method used

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Embodiment Construction

[0012] Various embodiments used in this patent document to describe the principles of the invention and discussed below Figures 1 to 3B It is illustrative only and should not be construed as limiting the scope of the invention in any way. Those skilled in the art will understand that the principles of the invention may be implemented in any type of suitably arranged device or system.

[0013] figure 1 A field device 100 including a capacitor driven field effect transistor (FET) 102 and a FET driver 104 is illustrated in accordance with an embodiment of the disclosure. exist figure 1 The embodiment of field device 100 shown in is for illustration only. Other embodiments of field device 100 may be used without departing from the scope of this disclosure.

[0014] In addition to capacitor driven FET 102 and FET driver 104 , field device 100 includes a load and driver stage. For some embodiments, the load may be coupled to the high voltage V + , while the driver stage is co...

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Abstract

A field-effect transistor (FET) driver is provided that includes an input modulator (202) and an isolating capacitor (206, 304). The input modulator is configured to output an alternating current (AC) signal. The isolating capacitor is configured to receive the AC signal as an input and to store a charge based on the AC signal in a filter capacitor (310). The filter capacitor is configured to drive a capacitor-driven FET (102, 208, 210, 212) based on the stored charge.

Description

technical field [0001] This disclosure generally relates to transistors. More specifically, the present disclosure relates to field effect transistor drivers. Background technique [0002] For conventional applications using potential free contacts, PhotoMOS or solid state relays are often implemented. However, these relays may be too slow for some applications of the field or may require their own isolated power supply. In some applications, standard field effect transistor (FET) drivers can be implemented as replacements. However, standard FET drivers add DC to the field. Therefore, standard FET drivers cannot be used as a replacement for PhotoMOS or solid state relays for applications where DC cannot be added to the field. Contents of the invention [0003] The present disclosure provides a field effect transistor (FET) driver. [0004] In a first embodiment, a FET driver includes an input modulator and an isolation capacitor. The input modulator is configured to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687H03K17/04
CPCH03K17/162H03K17/6877H03K17/689H03K2217/0009
Inventor E.沃米斯特
Owner HONEYWELL INT INC