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Flash memory error correction method and device

An error correction method and technology of an error correction device, which are applied in the computer field and can solve problems such as the reduction of the SSD storage system.

Active Publication Date: 2017-06-09
HUAWEI TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The embodiment of the present invention provides a flash memory error correction method and device to overcome the problem in the prior art that the SSD storage system is greatly reduced due to the multiplication of the read delay

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  • Flash memory error correction method and device
  • Flash memory error correction method and device

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Embodiment Construction

[0051] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0052] Solid-state storage has long been used in the storage of high-value data in enterprises and in consumer electronics. However, as enterprise-level storage applications become increasingly complex, traditional storage arrays gradually face challenges in the following aspects:

[0053] (1) Reliability. Limited by mechanical components o...

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Abstract

The invention provides a flash memory error correction method and device. The method comprises the steps of determining a first data bit in data obtained by reading a flash memory page by a (n+1)th voltage reading threshold value and data obtained by reading the flash memory page by a mth voltage reading threshold value, wherein the first data bit is a data bit which has different corresponding data in the same data bit in the data obtained by reading the flash memory page by the (n+1)th voltage reading threshold value and the data obtained by reading the flash memory page by the mth voltage reading threshold value, and further, the credibility of the first data bit in the data obtained by reading the flash memory page by the (n+1)th voltage reading threshold value; performing error correcting decoding on data obtained by reading the flash memory page by the (n+1)th voltage reading threshold value according to the credibility of the first data bit after regulation. The data obtained by reading the same flash memory page twice is used in a combined way; the credibility of the data bit corresponding to the data with different data bits is reduced, so that the error correcting decoding success rate is effectively improved; the performance of an SSD (solid state drive) storage system can be greatly improved.

Description

technical field [0001] The invention relates to computer technology, in particular to a flash memory error correction method and device. Background technique [0002] With the continuous maturity of flash memory technology, it is widely used in the field of solid-state storage. However, the data stored in the flash memory may have several bit errors. If the data read from the physical page of the flash memory is directly returned to the upper layer business, it may cause business failure. [0003] In order to ensure that the data returned to the upper-layer business is correct and valid, it is necessary to perform error checking and correction (Error Correcting Code, ECC) protection on the business data, that is, to perform ECC encoding on the business data, and then write the ECC-encoded data to into the flash memory. Whenever data is read, error checking and correction is performed on the data read from the flash memory, thereby improving the reliability of business data...

Claims

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Application Information

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IPC IPC(8): G11C29/42
CPCG11C29/42G06F11/1068G11C11/5642G06F3/061G06F3/0679G11C16/26G11C16/34G11C29/52H03M13/255
Inventor 曾雁星沈建强王工艺
Owner HUAWEI TECH CO LTD
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