Pre-emphasis driving circuit based on cascode pseudo-differential structure

A driving circuit, cascode technology, applied in the direction of logic circuit, logic circuit coupling/interface using field effect transistor, logic circuit connection/interface layout, etc. Meet different environments and other problems, and achieve the effect of meeting environmental requirements, simple circuit structure, and high output flexibility

Active Publication Date: 2021-02-05
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the above-mentioned pre-emphasis driving circuits are all designed by pre-calculating the required voltage value requirements, so they are mainly limited to the output of a single pre-emphasis voltage value, and the complexity of FIR filter design limits multiple pre-emphasis voltages. The output of the value makes the pre-emphasis circuit lack of flexibility in voltage output, and cannot meet different environments well.

Method used

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  • Pre-emphasis driving circuit based on cascode pseudo-differential structure
  • Pre-emphasis driving circuit based on cascode pseudo-differential structure
  • Pre-emphasis driving circuit based on cascode pseudo-differential structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Embodiment one: if figure 1 As shown, a pre-emphasis driving circuit based on a cascode pseudo-differential structure includes a bias circuit, a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, and a fifth MOS transistor M4. MOS tube M5, sixth MOS tube M6, seventh MOS tube M7, eighth MOS tube M8, ninth MOS tube M9, tenth MOS tube M10, eleventh MOS tube M11 and twelfth MOS tube M12, the first The MOS tube M1, the second MOS tube M2, the third MOS tube M3, the seventh MOS tube M7, the eighth MOS tube M8 and the ninth MOS tube M9 are all P-type MOS tubes, the fourth MOS tube M4, the fifth MOS tube M5, the sixth MOS tube M6, the tenth MOS tube M10, the eleventh MOS tube M11 and the twelfth MOS tube M12 are all N-type MOS tubes; the bias circuit has a power supply terminal, an input terminal, and a first bias voltage terminal , the second bias voltage terminal, the first voltage control terminal, the second voltage ...

Embodiment 2

[0019] Embodiment two: if figure 1 As shown, a pre-emphasis driving circuit based on a cascode pseudo-differential structure includes a bias circuit, a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, and a fifth MOS transistor M4. MOS tube M5, sixth MOS tube M6, seventh MOS tube M7, eighth MOS tube M8, ninth MOS tube M9, tenth MOS tube M10, eleventh MOS tube M11 and twelfth MOS tube M12, the first The MOS tube M1, the second MOS tube M2, the third MOS tube M3, the seventh MOS tube M7, the eighth MOS tube M8 and the ninth MOS tube M9 are all P-type MOS tubes, the fourth MOS tube M4, the fifth MOS tube M5, the sixth MOS tube M6, the tenth MOS tube M10, the eleventh MOS tube M11 and the twelfth MOS tube M12 are all N-type MOS tubes; the bias circuit has a power supply terminal, an input terminal, and a first bias voltage terminal , the second bias voltage terminal, the first voltage control terminal, the second voltage ...

Embodiment 3

[0021] Embodiment three: as figure 1 As shown, a pre-emphasis driving circuit based on a cascode pseudo-differential structure includes a bias circuit, a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, and a fifth MOS transistor M4. MOS tube M5, sixth MOS tube M6, seventh MOS tube M7, eighth MOS tube M8, ninth MOS tube M9, tenth MOS tube M10, eleventh MOS tube M11 and twelfth MOS tube M12, the first The MOS tube M1, the second MOS tube M2, the third MOS tube M3, the seventh MOS tube M7, the eighth MOS tube M8 and the ninth MOS tube M9 are all P-type MOS tubes, the fourth MOS tube M4, the fifth MOS tube M5, the sixth MOS tube M6, the tenth MOS tube M10, the eleventh MOS tube M11 and the twelfth MOS tube M12 are all N-type MOS tubes; the bias circuit has a power supply terminal, an input terminal, and a first bias voltage terminal , the second bias voltage terminal, the first voltage control terminal, the second voltag...

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PUM

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Abstract

The invention discloses a pre-emphasis driving circuit based on a cascode pseudo-differential structure, including a bias circuit, a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, a fifth MOS transistor, The sixth MOS tube, the seventh MOS tube, the eighth MOS tube, the ninth MOS tube, the tenth MOS tube, the eleventh MOS tube and the twelfth MOS tube, the first MOS tube, the second MOS tube, the third MOS tube The seventh MOS tube, the eighth MOS tube and the ninth MOS tube are all P-type MOS tubes, the fourth MOS tube, the fifth MOS tube, the sixth MOS tube, the tenth MOS tube, the eleventh MOS tube and the The twelve MOS tubes are all N-type MOS tubes; the advantage is that on the basis of a simple circuit structure, the output flexibility is high, and different pre-emphasis voltage drive signals can be output according to needs to meet different environmental requirements.

Description

technical field [0001] The invention relates to a pre-emphasis driving circuit, in particular to a pre-emphasis driving circuit based on a cascode pseudo-differential structure. Background technique [0002] With the continuous improvement of network and communication data transmission rates, people's demand for bandwidth is increasing. However, traditional electrical interconnection has serious disadvantages such as dielectric loss and channel attenuation. Therefore, the improvement of the bandwidth is greatly limited. [0003] Optical interconnection uses light waves as a transmission method to transmit information carriers, and performs parallel transmission and processing of optical information. Optical interconnection technology has incomparable advantages in high-speed data transmission environment - small crosstalk, high density, fast speed, low power consumption, etc., and will gradually replace traditional electrical interconnection. Among them, photonic devices t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0185
CPCH03K19/018507
Inventor 陈伟伟汪鹏君张亚伟李文辉杨建义
Owner NINGBO UNIV
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