Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A double c structure siw transmission line

A transmission line, traditional technology, applied in waveguides, circuits, waveguide-type devices, etc., can solve the problems of unsatisfactory traveling wave off state, increase electromagnetic wave outward radiation, reduce the Q value of traveling cavity, etc., to achieve low loss, electromagnetic wave outward radiation. The effect of small, high cavity Q value

Active Publication Date: 2020-03-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention replaces the metal cylinders in the traditional SIW by adopting a double-C structure (interlaced sheet-shaped arc metal sheets), so as to overcome the leakage of electromagnetic waves caused by the two rows of metal cylinders in the traditional SIW structure during the transmission process, resulting in the failure of traveling waves. The state is not ideal, the technical problem of reducing the Q value of the cavity and increasing the outward radiation of electromagnetic waves

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A double c structure siw transmission line
  • A double c structure siw transmission line
  • A double c structure siw transmission line

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The technical scheme of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0017] Such as figure 1 As shown, it is an X-band traditional SIW transmission line that transmits in the air, with a center frequency of 10GHZ and a cutoff frequency of 6.5GHZ. The electrical length of the transmission line is 73.7mm, the height is 2.5mm, the distance between two rows of parallel metal cylinders is 29mm, the cylinder radius is 0.3mm, and the distance between the centers of two adjacent cylinders is 1.1mm. figure 2 , image 3 is the simulated S12 parameter and Q value.

[0018] Such as Figure 4 As shown, it is a SIW transmission line with double C structure. The electrical length, height, cut-off frequency, and center frequency are consistent with traditional SIW transmission lines. The outer radius of the sheet arc metal sheet is 0.7mm, and the inner radius is 0.6mm. Figure 6 It is a high-order mode a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to microwave and transmission line technology, in particular to a double-C structure SIW transmission line, which has the characteristics of high Q, low loss and low leakage. The present invention replaces each row of metal cylinders of the traditional SIW transmission line with two rows of staggered sheet-shaped arc metal sheets. Each sheet-shaped arc metal sheet is the same, and the inner radius of the arc is D. The shortest distance of the arc metal sheet is d, the minimum distance between the two ends of the arc is f, and the shortest distance between the upper and lower rows of staggered sheet arc metal sheets is w, where 0<d<D, d<f, 0 <w≤d. The present invention replaces the metal cylinders in the traditional SIW with a double-C structure, and while ensuring the TM-free mode, it overcomes the fact that the two rows of metal cylinders in the traditional SIW structure leak electromagnetic waves during the transmission process, resulting in an unsatisfactory state of the traveling wave. It is a big technical problem to reduce the Q value of the cavity and increase the outward radiation of electromagnetic waves.

Description

technical field [0001] The invention relates to microwave and transmission line technology, in particular to a double-C structure SIW transmission line, which has the characteristics of high Q, low loss and low leakage. Background technique [0002] Since the advent of Maxwell's equations, in just over a hundred years, the application technology of electromagnetism in engineering has developed by leaps and bounds. From metal waveguides to planar integrated microstrip lines, the microwave technology industry has experienced one milestone after another. The bulky metal waveguide no longer meets the requirements of microwave integration in today's society. The microstrip circuit is small in size, low in cost, and easy to integrate. However, the open structure of the microstrip circuit itself limits its quality factor and power capacity. [0003] Substrate integrated waveguide (SIW) is a new type of waveguide structure proposed in recent years. It is to set two rows of metal cy...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01P3/18
CPCH01P3/18
Inventor 汪晓光张丽君陈良方建成刘水平肖宇杜凤媛谢海岩梁迪飞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com