Bi-directional power conversion system and conversion method based on insulated gate bipolar transistor

A bipolar transistor and bipolar triode technology, which is used in the conversion of AC power input to DC power output, output power conversion devices, and structural components of conversion equipment, etc. Charging methods, damage to insulated gate bipolar transistors, etc.

Pending Publication Date: 2019-01-18
GUANGDONG ANHEWEI ELECTRIC POWER CONSTR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The unstable output voltage of the traditional charging equipment grid leads to low DC voltage utilization, and the output voltage is not adjustable, which cannot meet the needs of different models and different charging methods;
[0006] However, the insulated gate bipolar transistor withstands overcurrent for only a few microseconds, and the overcurrent resistance is small. When there is no protection device in the drive circuit, the overcurrent will damage the insulated gate bipolar transistor.

Method used

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  • Bi-directional power conversion system and conversion method based on insulated gate bipolar transistor
  • Bi-directional power conversion system and conversion method based on insulated gate bipolar transistor
  • Bi-directional power conversion system and conversion method based on insulated gate bipolar transistor

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Embodiment Construction

[0081] In order to further understand the content, features and effects of the present invention, the following examples are given, and detailed descriptions are given below with reference to the accompanying drawings.

[0082] The bidirectional power conversion method based on the insulated gate bipolar transistor provided by the embodiment of the present invention includes: first detecting the input current in the circuit through the current detector, and then performing overcurrent protection on the insulated gate bipolar transistor through the current protector ;

[0083] The insulated gate field effect transistor is controlled by the insulated gate bipolar transistor chip;

[0084] The bipolar triode is controlled by the freewheeling diode chip;

[0085] The encapsulated insulated gate bipolar transistor module is directly applied to the AC / DC converter; the input current is input to the rectifier through the freewheeling diode chip, the input current is rectified by the...

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Abstract

The invention belongs to the technical field of voltage conversion system, and discloses a bi-directional power conversion system and a conversion method based on an insulated gate bipolar transistor,The system is provided with a circuit board, A current detector is mounted on the upper end of the circuit board, A low end of that current detector is electrically connected with a current protector, A low end of that current protector is electrically connected with an insulate gate bipolar transistor chip, A low end of that insulated gate bipolar transistor chip is electrically connected with afreewheeling diode chip, and two ends of the circuit board are tin-bonded with an insulated gate field effect transistor and a bipolar transistor, and the insulated gate field effect transistor and the bipolar transistor are respectively electrically connected with the insulated gate bipolar transistor chip and the freewheeling diode chip. The charging mode adopted by the invention can adjust thecharging power according to the capacity and characteristics of the battery through the increase or decrease of the module, and has the advantages of high utilization ratio of the DC voltage, adjustable output voltage, strong anti-load disturbance ability and bi-directional flow of energy.

Description

technical field [0001] The invention belongs to the technical field of voltage conversion, and in particular relates to a bidirectional power conversion system and conversion method based on an insulated gate bipolar transistor. Background technique [0002] At present, the existing technology commonly used in the industry is as follows, [0003] The insulated gate bipolar transistor is a composite full-control voltage-driven power semiconductor device composed of a bipolar triode and an insulated gate field effect transistor. In recent years, with the increase of the state's support for new energy vehicles, the construction of charging infrastructure has become a major problem restricting the development of new energy vehicles. The unstable output voltage of the traditional charging equipment grid leads to low DC voltage utilization, and the output voltage is not adjustable, which cannot meet the needs of different vehicle models and different charging methods; while the I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/00
CPCH02M7/003
Inventor 叶楚安张燎黄康帝张恩泽郭莉
Owner GUANGDONG ANHEWEI ELECTRIC POWER CONSTR CO LTD
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