Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of array substrate and preparation method thereof

A technology of array substrate and base substrate, applied in the field of array substrate and its preparation, can solve the problems of easy occurrence of short circuit, decrease of panel yield and the like

Active Publication Date: 2021-01-26
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
View PDF14 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The main purpose of the present invention is to provide an array substrate and its preparation method, which is used to solve the problem in the related art that the overlapping area between the gate and the source and drain is prone to short circuit, resulting in a decrease in panel yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of array substrate and preparation method thereof
  • A kind of array substrate and preparation method thereof
  • A kind of array substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0037] The TFT (Thin Film Transistor, Thin Film Transistor) of the top-gate structure has attracted attention because of its higher on-state current, higher aperture ratio and better TFT stability than the TFT of the bottom-gate structure.

[0038] Such as figure 1 and figure 2 As shown, the array substrate of a TFT with a top-gate structure in the related art includes a base substrate 1, and an active layer 2, a gate insulating layer 3, a gate metal layer 4...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention relates to the field of display technology, in particular to an array substrate and a preparation method thereof. The method is used to solve the problem in the related art that the overlapping area between the gate, the source and the drain is prone to short circuit, which causes the yield rate of the panel to decrease. An embodiment of the present invention provides an array substrate, on which a plurality of TFTs are arranged, and each TFT includes an active layer, a gate insulating layer, a gate, a first interlayer insulating layer, The second interlayer insulating layer, the source electrode and the drain electrode; the source electrode and the drain electrode are in contact with the active layer at least through the via holes penetrating the first interlayer insulating layer; the second interlayer insulating layer includes a first insulating pattern, the first The insulating pattern is located between the first interlayer insulating layer and the source and drain, and is located in the area where the TFT is located. The first insulating pattern at least covers the overlapping area of ​​the side of the source, the drain and the gate in the area where the TFT is located. The embodiments of the present invention are used in the production and manufacture of display panels.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a preparation method thereof. Background technique [0002] Currently, a thin film transistor (Thin Film Transistor, TFT) is a main driving element of a liquid crystal display and an active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode, AMOLED). Contents of the invention [0003] The main purpose of the present invention is to provide an array substrate and its preparation method, which is used to solve the problem in the related art that the overlapping area between the gate, the source and the drain is prone to short circuit, resulting in a decrease in panel yield. [0004] To achieve the above object, the present invention adopts the following technical solutions: [0005] In a first aspect, an embodiment of the present invention provides an array substrate, including a base substrate and a plurality of TFTs ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L29/786H01L21/77
CPCH01L27/1237H01L27/124H01L27/1259H01L29/78618H01L29/78633
Inventor 刘军闫梁臣周斌方金钢李广耀苏同上罗标桂学海
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products