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TFT (Thin Film Transistor) array substrate, manufacturing method and display device

An array substrate and via hole technology, applied in the field of display device manufacturing, can solve problems such as pixel electrode breakage and product yield decline

Active Publication Date: 2014-12-10
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Embodiments of the present invention provide a TFT array substrate, a manufacturing method, and a liquid crystal display device to solve the problem of an inner stepped barb angle formed between the sidewall of the resin layer and the sidewall of the passivation layer after the via hole is formed. , leading to the breakage of the pixel electrode and the decline in product yield

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  • TFT (Thin Film Transistor) array substrate, manufacturing method and display device
  • TFT (Thin Film Transistor) array substrate, manufacturing method and display device
  • TFT (Thin Film Transistor) array substrate, manufacturing method and display device

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Embodiment Construction

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0022] An embodiment of the present invention provides a method for manufacturing a TFT array substrate, such as figure 2 shown, including:

[0023] S201 , on the TFT array substrate on which the passivation layer thin film and the resin layer thin film are formed, the resin where the via hole needs to be provided is removed through a patterning process, so as to form the resin layer via hole.

[0024] S202. Etching the passivation layer below the resin laye...

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Abstract

Embodiments of the present invention provide an array substrate, a method for manufacturing the same and a display device. The method for manufacturing a thin film transistor array substrate comprises: forming a passivation layer and a resin layer on a substrate in sequence; removing a part of the resin layer through a patterning process, so as to form a resin-layer via hole passing through the resin layer; etching the passivation layer under the resin-layer via hole, so as to form a via hole passing through the resin layer and the passivation layer; treating the via hole with an etching process, so that a sidewall at the resin layer and a sidewall at the passivation layer for the via hole smoothly adjoin.

Description

technical field [0001] The invention relates to the field of display device manufacturing, in particular to a TFT array substrate, a manufacturing method and a display device. Background technique [0002] For TFT-LCD (Thin Film Transistor-Liquid Crystal Display, thin film transistor liquid crystal display) and OLED (Organic Light-Emitting Diode, organic light-emitting semiconductor) display devices, the quality of the TFT array substrate is particularly important. [0003] In the existing TFT array substrate manufacturing method, it is necessary to deposit a passivation layer on the substrate that has formed the TFT structure. Usually, in order to further improve the aperture ratio of the product, it is also necessary to coat a layer of resin layer on the surface of the passivation layer. , and then form a via hole on the drain electrode of the TFT by using a patterning process to connect the pixel electrode. Due to technical reasons, such as figure 1 As shown, after the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77G02F1/1362G02F1/1368
CPCH01L21/308H01L27/1259H01L21/31138H01L21/76802G03F7/00G02F1/136227G02F2201/40H01L27/124H01L27/1244H01L21/31116
Inventor 曹占锋童晓阳姚琪
Owner BOE TECH GRP CO LTD
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