Waveguide photodetector monolithically integrated with dbr cladding and mirrors

A technology of monolithic integration and mirrors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as difficult optical coupling and small external quantum efficiency

Active Publication Date: 2021-05-18
CHONGQING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the tiny photosensitive mesa size will lead to difficult optical coupling, exhibiting small external quantum efficiency
For waveguide photodetectors, there is no solution to the conflict between bandwidth and quantum efficiency.

Method used

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  • Waveguide photodetector monolithically integrated with dbr cladding and mirrors
  • Waveguide photodetector monolithically integrated with dbr cladding and mirrors
  • Waveguide photodetector monolithically integrated with dbr cladding and mirrors

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Embodiment Construction

[0020] The technical solutions in the embodiments of the present invention will be described clearly and in detail below with reference to the drawings in the embodiments of the present invention. The described embodiments are only some of the embodiments of the invention.

[0021] The technical scheme that the present invention solves the problems of the technologies described above is:

[0022] see figure 1 The three-dimensional schematic diagram of the device shown, figure 2 The top view of the device is shown and image 3The shown device is a cross-sectional schematic view of the active region perpendicular to the light incident direction. As a specific embodiment, the waveguide photodetector monolithically integrated with the DBR cladding layer and the mirror of the present invention includes an epitaxial layer from the bottom layer to the top layer It can be in order: semi-insulating substrate and buffer layer 1, the lower cladding layer of the optical waveguide is a...

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Abstract

The present invention claims to protect a waveguide photodetector monolithically integrated with DBR cladding and reflectors. The structure integrates photodiodes, optical waveguides, optical waveguides laterally to the DBR cladding, and DBR reflectors on a semi-insulating substrate. superior. In the claimed structure, there is a DBR cladding made of semiconductor and organic insulator on the left and right sides of the optical waveguide to improve its light confinement, and there is a DBR reflector made of semiconductor and organic insulator at the end of the optical waveguide to The effective light absorption length of the device is increased, thereby improving the quantum efficiency of the photodetector, and alleviating the contradiction between the mutual restriction of the bandwidth of the photodetector and the quantum efficiency.

Description

technical field [0001] The invention belongs to the technical fields of optical communication and optoelectronics, and in particular relates to a waveguide photodetector structure monolithically integrated with a DBR cladding layer and a reflector. Background technique [0002] Photodetectors with high quantum efficiency, broadband and high output power are key components in optical communication systems. In general, there is a mutually restrictive relationship between the bandwidth and quantum efficiency of photodetectors. The quantum efficiency of the photodetector is directly proportional to the thickness of the light absorbing layer and the area of ​​the PN junction. The bandwidth of the photodetector is mainly limited by the carrier transit time and RC time, which is inversely proportional to the thickness of the light absorbing layer and the area of ​​the PN junction. The RC delay time can be reduced by increasing the thickness of the non-light-absorbing low-doped N-...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L31/0232H01L31/101
CPCH01L31/02327H01L31/101
Inventor刘涛马勇王玺潘武
OwnerCHONGQING UNIV OF POSTS & TELECOMM