Supercharge Your Innovation With Domain-Expert AI Agents!

A method for preparing partial polysilicon thin film passivation contact based on pvd technology

A technology of polycrystalline silicon thin film and amorphous silicon thin film, which is applied in the field of solar cells, can solve the problems of reducing metal recombination, large short-circuit current loss, application limitation, etc., and achieves the effects of reducing metal recombination, increasing open-circuit voltage, and reducing short-circuit current loss.

Active Publication Date: 2021-09-07
江苏杰太光电技术有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to reduce metal recombination, passivated contact cells have received widespread attention in recent years. Feldmann et al. from the Fraunhofer Institute for Solar Energy Systems in Germany have increased the conversion efficiency of solar cells based on tunnel oxide layer passivated metal contact structures to 25.8%; The polysilicon film is deposited on the tunneling oxide layer, and the subsequent metallization process reduces the direct contact between the metal and the substrate silicon, which can greatly reduce the metal recombination, thereby significantly improving the open circuit voltage. However, in the process of using this technology, due to the high Especially when the polysilicon layer is on the light-receiving surface, the short-circuit current loss is large, so this technology is currently used for non-smooth surfaces, and the application of the light-receiving surface is greatly limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing partial polysilicon thin film passivation contact based on pvd technology
  • A method for preparing partial polysilicon thin film passivation contact based on pvd technology
  • A method for preparing partial polysilicon thin film passivation contact based on pvd technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) Select a P-type crystalline silicon substrate 1 of 157.35mm×157.35mm, and clean the front and back surfaces of the P-type crystalline silicon substrate 1, remove the damaged layer and make texture, wherein the resistivity of the P-type silicon substrate is 1Ω•cm, the thickness is 180 μm; the battery structure after this step is as follows figure 1 shown;

[0043] (2) Doping the P-type crystalline silicon substrate 1 after texturing in step (1) with phosphorus, and the doping method can be a high-temperature diffusion method; the high-temperature diffusion method is to make the P-type crystalline silicon substrate 1 after texturing in step (1) 1. Diffusion is carried out in a diffusion furnace. Phosphorus oxychloride and oxygen are introduced into the diffusion furnace. After the reaction, an n+ emitter 2 is formed on the crystalline silicon substrate 1; the temperature of diffusion during the process is 800°C, and the time is 120 minutes; The square resistance of t...

Embodiment 2

[0049] (1) Select a P-type crystalline silicon substrate 1 of 157.35mm×157.35mm, and clean the front and back surfaces of the P-type crystalline silicon substrate 1, remove the damaged layer and make texture, wherein the resistivity of the P-type silicon substrate is 2Ω•cm, the thickness is 250μm; the battery structure after this step is as follows figure 1 shown;

[0050] (2) Doping the P-type crystalline silicon substrate 1 after texturing in step (1) with phosphorus, and the doping method may be an ion implantation method; the ion implantation method is to make the P-type crystalline silicon substrate 1 after texturing in step (1) 1 Put it into the ion implanter, implant phosphorus into one side of the silicon substrate, and the implant dose is 5×10 15 ions / cm 2 , put the implanted P-type silicon substrate 1 into H 2 o 2 / HCL solution for cleaning, after cleaning, put the silicon substrate 1 into the annealing furnace for high-temperature annealing treatment, the anneal...

Embodiment 3

[0056] (1) Select a P-type crystalline silicon substrate 1 of 157.35mm×157.35mm, and clean the front and back surfaces of the P-type crystalline silicon substrate 1, remove the damaged layer and make texture, wherein the resistivity of the P-type silicon substrate is 0.3Ω•cm, the thickness is 200 μm; the battery structure after this step is as follows figure 1 shown;

[0057] (2) Doping the P-type crystalline silicon substrate 1 after texturing in step (1) with phosphorus, and the doping method can be a high-temperature diffusion method; the high-temperature diffusion method is to make the P-type crystalline silicon substrate 1 after texturing in step (1) 1 Put it into a diffusion furnace for diffusion. Phosphorus oxychloride and oxygen are introduced into the diffusion furnace. After the reaction, an n+ emitter 2 is formed on the crystalline silicon substrate 1; the temperature of diffusion during the process is 900 ° C, and the time is 240 minutes; The sheet resistance valu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing local polysilicon film passivation contacts based on PVD technology. The method prepares a certain thickness of oxide layer on the surface of doped crystalline silicon, adopts PVD method on the oxide layer, and uses a mask to selectively prepare a certain thickness of polysilicon film in the metal contact area. After metallization, the metal paste is only Contact the local passivation contact area, this structure greatly reduces the metal recombination in the metal contact area, which can effectively improve the open circuit voltage of the battery; at the same time, the area outside the local passivation contact structure does not contain doped polysilicon layer, compared with the entire polysilicon film The structural battery will not cause optical loss caused by polysilicon itself, avoiding the loss of short-circuit current, thereby improving the conversion efficiency of the battery.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing local polysilicon film passivation contacts based on PVD technology. Background technique [0002] In crystalline silicon solar cells, with the sharp increase in market demand for high-efficiency cells, reducing metal recombination is an important factor for the continuous improvement of cell efficiency in the process of cell efficiency improvement. In order to reduce metal recombination, passivated contact cells have received widespread attention in recent years. Feldmann et al. from the Fraunhofer Institute for Solar Energy Systems in Germany have increased the conversion efficiency of solar cells based on tunnel oxide layer passivated metal contact structures to 25.8%; The polysilicon film is deposited on the tunneling oxide layer, and the subsequent metallization process reduces the direct contact between the metal and the substrate silicon, which c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C14/04C23C14/18
CPCC23C14/042C23C14/185H01L31/1804H01L31/1868Y02P70/50
Inventor 林建伟陈嘉乔振聪马丽敏刘志锋何大娟
Owner 江苏杰太光电技术有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com