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A high-throughput alloy preparation and ho-fe-b phase diagram test method

A test method, ho-fe-b technology, applied in measurement devices, inductance/transformer/magnet manufacturing, instruments, etc., can solve the problems of easy neglect, low phase diagram efficiency, lack of phase diagram, etc., and achieve high-value utilization, The effect of balanced utilization

Active Publication Date: 2022-04-19
GUILIN UNIV OF ELECTRONIC TECH
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Problems solved by technology

[0004] The conventional method for determining the phase diagram is to use the alloy method, but the efficiency of the alloy method is low and it is easy to ignore some phase components, resulting in the absence of the phase diagram

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Embodiment Construction

[0031] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention are clearly and completely described below. Apparently, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0032] Such as figure 1 As shown, the specific implementation steps for determining the 800°C isothermal phase diagram of the Ho-Fe-B ternary system in this embodiment include:

[0033] (1) The purity of the initial raw materials used in this application for Ho, Fe and B is ≥99.99%. According to the technology of high-throughput preparation and testing, the mass of FeB is first weighed and proportioned according to the design requirements;

[0034] (2) Smelting Fe and B...

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Abstract

The invention provides a method for high-throughput alloy preparation and Ho-Fe-B phase diagram testing, comprising: weighing and proportioning the quality of FeB according to design requirements; melting the proportioned Fe and B to form FeB alloy compounds; The smelted FeB ingot is homogenized and heat-treated in a vacuum state; the treated sample is cut and then metallographically treated; the metallographically treated FeB alloy and Ho cylinders are stacked to complete the combination; the FeB-Ho prepared by high-throughput is placed in a vacuum-sealed tube, and kept at 800°C for 480h; after the diffusion is completed, the sample is cut to observe the phase structure formed by the diffusion layer; Quantitative testing was used to obtain the metallographic structure distribution of the diffusion layer and analyze the phase structure relationship between the diffusion layers. The invention shortens the experimental cycle for drawing phase diagrams, saves manpower and material resources, and obtains a clear and accurate Ho-Fe-B phase relationship.

Description

technical field [0001] The invention belongs to the field of permanent magnet materials, and in particular relates to a high-throughput alloy preparation and Ho-Fe-B phase diagram testing method. Background technique [0002] The development, production and application of rare earth permanent magnet materials are the material basis of a country's high-tech and social development; widely used in computer technology, information technology, aerospace technology, automation technology, medical equipment and household appliances; no rare earth permanent magnet materials There would be no industrial modernization, let alone the progress of human civilization. my country is rich in rare earth resources, and my country is also a major producer of rare earths. According to the statistics of the China Rare Earth Industry Association, in 2016, my country produced 140,000 tons of rare earth permanent magnet blanks, of which 26,900 tons were exported, and continued to maintain rapid gr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/105B22F3/24C21D1/18C21D1/773C21D6/00C22C28/00C22C38/00C22F1/02G01N23/225H01F1/057H01F41/02
CPCB22F3/105B22F3/24C22C28/00C22C38/002C21D6/00C21D1/18C22F1/002H01F1/0577H01F41/0293G01N23/225B22F2003/248
Inventor 姚青荣饶光辉孙前程王江黄伟超邓健秋周怀营
Owner GUILIN UNIV OF ELECTRONIC TECH
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