Unlock instant, AI-driven research and patent intelligence for your innovation.

Air intake system for a plasma reaction chamber

A plasma reaction, plasma technology, applied in electrical components, circuits, discharge tubes, etc., can solve the problems of affecting uniformity, process result asymmetry, pressure difference, etc.

Active Publication Date: 2022-04-08
JIANGSU LEUVEN INSTR CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the air pressure in the process is generally at the mT level, and the diameter of the loop is greater than 12 inches, there is a pressure difference between the total air path and several nozzles, so there is a problem that the asymmetry of the process results affects the uniformity, so how to make the edge air intake uniform and Symmetry becomes the difficulty of design

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Air intake system for a plasma reaction chamber
  • Air intake system for a plasma reaction chamber
  • Air intake system for a plasma reaction chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. It should be understood that the specific The examples are only used to explain the present invention, not to limit the present invention. The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0025] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical" and "horizontal" are based on the orientation or positional relation...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an air intake system for a plasma reaction chamber, which comprises a central air inlet arranged on the upper part of the plasma reaction chamber and an edge air inlet arranged on the edge of the plasma reaction chamber, and also includes a uniform gas inner ring, the surface of which is provided with The air guide hole is arranged in the plasma reaction chamber in a manner that can rotate around the axial direction. The invention forms a certain included angle between the air guide hole and the radial direction of the uniform gas inner ring, and utilizes the high-speed gas injected into the gas guide hole to make the uniform gas inner ring rotate around the axial direction under the action of the high-speed air flow, thereby achieving highly symmetrical distribution of the air flow Effect.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a plasma reaction chamber gas inlet system. Background technique [0002] Plasma etching is the most common form of dry etching. Its principle is that the gas exposed to the electron region forms a plasma, and the resulting ionized gas and gas composed of released high-energy electrons form plasma or ions. When ionized gas atoms are accelerated through an electric field, they release enough force and surface repelling forces to tightly bond materials or etch surfaces. [0003] Plasma etching is a common processing method in integrated circuits and is widely used in sub-micron technology bands. Inductively Coupled Plasma Etch (ICPE for short) is the result of the interaction of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the radio frequency generated by the ICP radio frequency power supply is output to the ring coupling coil...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/3244
Inventor 许开东胡冬冬李娜琚里邱勇侯永刚车东晨陈璐
Owner JIANGSU LEUVEN INSTR CO LTD