Gallium ferrite nanofiber, manufacturing method and application of gallium ferrite nanofiber

A technology of nanofibers and manufacturing methods, which is applied in the field of gallium ferrite, can solve problems affecting the ferroelectric properties of materials, and achieve the effect of convenient operation, simple device, and not easy to break

Active Publication Date: 2021-09-21
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Gallium ferrite material is also made into a thin film in the prior art, but the thin film is constrained by the substrate, which will also significantly affect the ferroelectric properties of the material

Method used

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  • Gallium ferrite nanofiber, manufacturing method and application of gallium ferrite nanofiber
  • Gallium ferrite nanofiber, manufacturing method and application of gallium ferrite nanofiber
  • Gallium ferrite nanofiber, manufacturing method and application of gallium ferrite nanofiber

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Embodiment 2

[0073] The second embodiment of the present invention discloses a method for producing a ferrous gallium ferrium nanofiber, comprising the steps of:

[0074] Step 1, a ferroacemonic acid solution is prepared using a sol gel method;

[0075] Step 2, the sufficiently aging iron gallium agglomerate solution is electrostatically spun, obtain a ferroelectric somatic fiber wire having a diameter of the first fiber structure;

[0076] Step three, the ferrous gallium gallium gallium gallium gallium gallium gallium gallium gallium gallium gallium gallium gallium gallium gallium nanofibers are obtained, and the ferrous gallium nanofibers have room temperature monologue multi iron ferroelectric and ferromagnetic properties and have second. The fiber structure diameter is smaller than the diameter of the first fiber structure, and the second fiber structure of the ferrous nanofiber is 300 nm or less.

[0077] Preferably, the second fiber structure diameter relative to the first fiber structur...

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Abstract

The invention relates to a gallium ferrite nanofiber, a manufacturing method and an application of the gallium ferrite nanofiber. Gallium ferrite nanofibers are ferroelectric and ferromagnetic gallium ferrite nanofibers with room temperature single-phase multiferroicity, and their composition chemical formula is Ga x Fe 2‑x o 3 , the value range of x is 0.6-1.0, and the diameter of gallium ferrite nanofibers is below 300nm. The method comprises the following steps: preparing a gallium ferrite precursor solution by a sol-gel method; electrospinning the fully aged gallium ferrite precursor solution to obtain gallium ferrite precursor fiber filaments with a first fiber structure diameter; The gallium ferrite precursor fiber is heat-treated to obtain the gallium ferrite nanofiber. The gallium ferrite nanofiber has room temperature single-phase multiferroic ferroelectricity and ferromagnetism and has a second fiber structure diameter. The second fiber The structure diameter is below 300nm. Gallium ferrite nanofibers have both ferroelectric and ferromagnetic properties at room temperature and can be used in electronic devices.

Description

Technical field [0001] Technical Field The present invention relates to ferrite gallium, iron and more particularly to gallium nanofiber acid, methods of manufacture and use of Ga Ferrite nanofibers. Background technique [0002] Is well known, the spontaneous polarization of ferroelectric is formed by a ferroelectric crystal atomic displacement achieved storing digital information; the other hand, the ferromagnetic achieved by storing information ordered ferromagnetic material of the electron spin. Magnetic coupling multiferroic material (Magnetoelectric coupling multiferroics) means having both iron and iron compound electrical magnetic (magnetic order) (electrical sequence). Multi-iron material having the following characteristics: (1) a ferroelectric, ferromagnetic coexistence of two, the charge ordering ordered spin coupling there is a strong correlation; (2) to change the magnetic polarization state by regulating the electric field applied to a high density information stor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): D01F9/08D01D5/00D01D1/02H01F1/11B82Y25/00B82Y30/00B82Y40/00
CPCB82Y25/00B82Y30/00B82Y40/00D01D1/02D01D5/0015D01F9/08H01F1/11
Inventor 訾孟飞钟高阔李江宇安峰任传来
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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