Phase change memory, memory control method and memory chip

A phase-change memory, phase-change storage technology, applied in static memory, digital memory information, information storage and other directions, can solve the problem that the storage density of phase-change memory needs to be improved, and achieve the effect of improving storage density

Pending Publication Date: 2020-12-15
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the storage density of phase change memory still needs to be improved.

Method used

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  • Phase change memory, memory control method and memory chip
  • Phase change memory, memory control method and memory chip
  • Phase change memory, memory control method and memory chip

Examples

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Embodiment Construction

[0029] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. In particular, the following examples are only used to illustrate the present invention, but not to limit the scope of the present invention. Likewise, the following embodiments are only some of the embodiments of the present invention but not all of them. All other embodiments obtained by those skilled in the art without creative efforts all fall within the protection scope of the present invention.

[0030] In addition, the directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., only is the direction with reference to the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar elements are denoted by the same refer...

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Abstract

The invention relates to a phase change memory, a memory control method and a memory chip. The phase change memory comprises a first electrode, a second electrode, a phase change memory layer, a plurality of heaters and a control unit, wherein the phase change storage layer is positioned between the first electrode and the second electrode, and is electrically connected with the first electrode and the second electrode respectively; the control unit is electrically connected with the plurality of heaters and used for providing driving signals for the heaters. The plurality of heaters are respectively adjacent to different phase change regions of the phase change memory layer, and each heater is configured to be used for heating the adjacent phase change region under the driving of the driving signal, so that the multi-value storage of a single memory cell can be realized, and the storage density of the phase change memory is further improved.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor devices, in particular to a phase change memory, a memory control method and a memory chip. 【Background technique】 [0002] Phase change memory is considered by the International Semiconductor Industry Association to be the most likely to replace the current The device that will become the mainstream product of future memory and the device that will be the first to become a commercial product due to flash memory. [0003] However, the storage density of the current phase change memory still needs to be improved. 【Content of invention】 [0004] The object of the present invention is to provide a phase change memory, a memory control method and a memory chip, so as to increase the storage density of the phase change memory. [0005] In order to solve the above problems, the present invention provides a phase-change memory, which includes a first electrode, a second electrode, a phase-cha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00G11C11/56
CPCG11C13/004G11C13/0069G11C13/0004G11C11/5678G11C2013/008G11C2213/79G11C2213/52G11C2213/50
Inventor 喻丹杨芳
Owner YANGTZE MEMORY TECH CO LTD
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