Shouldering process for 12-inch single crystal drawing
A process method, single crystal pulling technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of increasing raw material and energy consumption, production efficiency and production capacity cannot be improved, single crystal The low survival rate of the silicon rod room has achieved the effect of reducing the man-hours of the process, reducing the number of priming times, and increasing the production capacity.
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Embodiment 1
[0026] according to figure 1 As shown, this embodiment provides a 12-inch single crystal pull shoulder shouldering process, including the length slope cooling method, the length slope cooling method is to set the shoulder length parameters, and then ensure the pulling speed and cooling range Constant, and manually adjust the pulling speed according to the actual situation in the furnace until the shouldering is completed.
[0027] The specific operation of the length slope cooling method is as follows:
[0028] Step 1. Input the shoulder length parameters of the monocrystalline silicon to be processed on the system page;
[0029] Step 2. Input the constant parameter values of pulling speed and cooling range on the system page;
[0030] Step 3: Start shouldering, and manually adjust the pulling speed according to the actual situation while shouldering.
[0031] When the seeding pulling speed is 240-280 mm / h, the length slope cooling method is switched.
[0032] The length...
Embodiment 2
[0034] according to figure 2 As shown, the present embodiment provides a shouldering process method for 12-inch single crystal drawing, including a diameter cooling method. The diameter cooling method is to set the shoulder diameter parameter, and the actual diameter and the set value are compared by the system. For comparison, the pulling speed is automatically adjusted according to the actual diameter value until the shouldering is completed.
[0035] The specific operation of the diameter cooling method is as follows:
[0036] Step 1. Input the shoulder diameter parameters of the monocrystalline silicon to be processed on the system page;
[0037] Step 2: After inputting the shoulder diameter parameter value, the system will compare the actual shoulder diameter of monocrystalline silicon with the input set value to obtain the difference;
[0038] Step 3: Start shouldering. During the shouldering process, the system will automatically adjust the pulling speed according to...
Embodiment 3
[0044] This embodiment provides a 12-inch single crystal pulling shouldering process. After the temperature adjustment is completed, it enters the seeding process, and after the seeding is completed, it enters the shouldering process. The shouldering process of the length slope cooling method is shown in the following table
[0045] Length slope cooling method process table
[0046] Shoulder length mm Pulling speed mm / h Power change kw 1 50 -2 20 50 -2.8 40 50 -3.5 60 55 -4.5 80 58 -6 100 60 -9 120 65 -12 140 65 -14 160 65 -14.5 180 65 -15
[0047] The change of power is the temperature drop range. When the shoulder length is 1mm, the temperature drop is 2kw. When the shoulder length is 20mm, the temperature drop is increased by 0.8kw based on the shoulder length of 1mm, and so on.
[0048] Among them, the shouldering process of the diameter cooling method is shown in the table below
[0049] Angled...
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