High-temperature transparent flexible HfO2 anisotropic magnetic film and preparation method thereof

Abstract

The invention provides a high-temperature transparent flexible HfO2 anisotropic magnetic film and a preparation method thereof.The preparation method comprises the following steps that 1, cobalt nitrate is dissolved in acetic acid to obtain a solution A, hafnium acetylacetonate is dissolved in acetylacetone to obtain a solution B, and the solution A and the solution B are mixed to obtain a Co ion doped HfO2 precursor solution; and 2, spin-coating the Co ion-doped HfO2 precursor solution on a single crystal fluorophlogopite substrate to prepare a wet film, baking glue and annealing the wet film to obtain a crystalline film on the single crystal fluorophlogopite substrate, and stripping the crystalline film to obtain the high-temperature transparent flexible HfO2 anisotropic magnetic film. According to the method, the HfO2 magnetic thin film in a flexible and transparent state can be prepared.

Description

Technical field

[0001] The present invention belongs to the field of functional materials, involving a high temperature and transparent flexible HFO 2 Each anisotropic magnetic film and the preparation method thereof. Background technique

[0002] Crystal oxide (HFO) 2 It has excellent chemical stability, high dielectric constant (high k) and wider prohibition width, is a high K insulated oxide. It is considered an alternative SIO 2 As one of the most ideal materials of the high K gate dielectric, it can be applied to a metal-oxide-semiconductor field effect transistor (MOSFETS). In 2004, Venkatesan et al. In the undoped single-halved HFO 2 Room temperature ferromagnetic properties were found in the film. According to traditional magnetic origin theory, HFO 2 Should be non-magnetic materials because HFO 2 HF 4+ And O 2- The ion D and F layers are full or full, and there is no loneliness to exist. This unexpected iron magnetic behavior is defined as "D 0 Iron magnetic (ferromagnet...

Examples

Embodiment 1

[0031] Step 1: Select the F-MICA substrate as a substrate, sequentially placed in a detergent, acetone, and ethanol in a substrate, and then rinse the substrate for a large amount of distilled water each time the ultrasonic wafer is washed with a large amount of distilled water.

[0032] Step 2: Put the clean F-MICA substrate in the ultraviolet light irradition for 40 min, so that the surface of the substrate reaches "atom cleanliness".

[0033] Step 3: CO (NO 3 ) 2 · 6h 2 O (cobalt nitrate), C 20 Hide 28 HFO 8 (Acetylacetonate) is proportional to the raw material, and the molar ratio of cobalt nitrate and acetylacetone is 0.1: 0.9. Cobalt nitrate and acetic acid were stirred for 15 min to mix the solution A, and the acetylacetonate and acetylacetone were mixed at 60 ° C water bath until dissolved to dissolve B. Finally, the solution A and solution B were mixed for 1.5 h, and 12 h was obtained from CO ion-doped HFO. 2 Pretty fluid.

[0034] Step 4: CO ion doped HFO 2 The precursor...

Embodiment 2

[0038] Step 1: Select the F-MICA substrate as a substrate, sequentially placed in a detergent, acetone, and ethanol in a substrate, and then rinse the substrate for a large amount of distilled water each time the ultrasonic wafer is washed with a large amount of distilled water.

[0039] Step 2: Put the clean F-MICA substrate in the ultraviolet light irradition for 40 min, so that the surface of the substrate reaches "atom cleanliness".

[0040] Step 3: CO (NO 3 ) 2 · 6h 2 O (cobalt nitrate), C 20 Hide 28 HFO 8 (Acetylacetonate) is proportional to the raw material, and the molar ratio of cobalt nitrate and acetylacetonate is 0.05: 0.95. Cobalt nitrate and acetic acid were stirred for 15 min to mix the solution A, and the acetylacetonate and acetylacetone were mixed at 60 ° C water bath until dissolved to dissolve B. Finally, the solution A and solution B were mixed for 1.5 h, and 12 h was obtained from CO ion-doped HFO. 2 Pretty fluid.

[0041] Step 4: CO ion doped HFO 2 The precu...

Embodiment 3

[0045] Step 1: Select the F-MICA substrate as a substrate, sequentially placed in a detergent, acetone, and ethanol in a substrate, and then rinse the substrate for a large amount of distilled water each time the ultrasonic wafer is washed with a large amount of distilled water.

[0046] Step 2: Put the clean F-MICA substrate in the ultraviolet light irradition for 40 min, so that the surface of the substrate reaches "atom cleanliness".

[0047] Step 3: CO (NO 3 ) 2 · 6h 2 O (cobalt nitrate), C 20 Hide 28 HFO 8 (Acetylacetonate) is proportional to the raw material, and the molar ratio of cobalt nitrate and acetylacetonate is 0.05: 0.95. Cobalt nitrate and acetic acid were stirred for 15 min to mix the solution A, and the acetylacetonate and acetylacetone were mixed at 60 ° C water bath until dissolved to dissolve B. Finally, two solutions were mixed for 1.5 h, and still 12 h got CO ion-doped HFO. 2 Pretty fluid.

[0048] Step 4: CO ion doped HFO 2 The precursor was prepared by a s...

Technical field

[0001] The present invention belongs to the field of functional materials, involving a high temperature and transparent flexible HFO 2 Each anisotropic magnetic film and the preparation method thereof. Background technique

[0002] Crystal oxide (HFO) 2 It has excellent chemical stability, high dielectric constant (high k) and wider prohibition width, is a high K insulated oxide. It is considered an alternative SIO 2 As one of the most ideal materials of the high K gate dielectric, it can be applied to a metal-oxide-semiconductor field effect transistor (MOSFETS). In 2004, Venkatesan et al. In the undoped single-halved HFO 2 Room temperature ferromagnetic properties were found in the film. According to traditional magnetic origin theory, HFO 2 Should be non-magnetic materials because HFO 2 HF 4+ And O 2- The ion D and F layers are full or full, and there is no loneliness to exist. This unexpected iron magnetic behavior is defined as "D 0 Iron magnetic (ferromagnet...

Examples

Embodiment 1

[0031] Step 1: Select the F-MICA substrate as a substrate, sequentially placed in a detergent, acetone, and ethanol in a substrate, and then rinse the substrate for a large amount of distilled water each time the ultrasonic wafer is washed with a large amount of distilled water.

[0032] Step 2: Put the clean F-MICA substrate in the ultraviolet light irradition for 40 min, so that the surface of the substrate reaches "atom cleanliness".

[0033] Step 3: CO (NO 3 ) 2 · 6h 2 O (cobalt nitrate), C 20 Hide 28 HFO 8 (Acetylacetonate) is proportional to the raw material, and the molar ratio of cobalt nitrate and acetylacetone is 0.1: 0.9. Cobalt nitrate and acetic acid were stirred for 15 min to mix the solution A, and the acetylacetonate and acetylacetone were mixed at 60 ° C water bath until dissolved to dissolve B. Finally, the solution A and solution B were mixed for 1.5 h, and 12 h was obtained from CO ion-doped HFO. 2 Pretty fluid.

[0034] Step 4: CO ion doped HFO 2 The precursor...

Embodiment 2

[0038] Step 1: Select the F-MICA substrate as a substrate, sequentially placed in a detergent, acetone, and ethanol in a substrate, and then rinse the substrate for a large amount of distilled water each time the ultrasonic wafer is washed with a large amount of distilled water.

[0039] Step 2: Put the clean F-MICA substrate in the ultraviolet light irradition for 40 min, so that the surface of the substrate reaches "atom cleanliness".

[0040] Step 3: CO (NO 3 ) 2 · 6h 2 O (cobalt nitrate), C 20 Hide 28 HFO 8 (Acetylacetonate) is proportional to the raw material, and the molar ratio of cobalt nitrate and acetylacetonate is 0.05: 0.95. Cobalt nitrate and acetic acid were stirred for 15 min to mix the solution A, and the acetylacetonate and acetylacetone were mixed at 60 ° C water bath until dissolved to dissolve B. Finally, the solution A and solution B were mixed for 1.5 h, and 12 h was obtained from CO ion-doped HFO. 2 Pretty fluid.

[0041] Step 4: CO ion doped HFO 2 The precu...

Embodiment 3

[0045] Step 1: Select the F-MICA substrate as a substrate, sequentially placed in a detergent, acetone, and ethanol in a substrate, and then rinse the substrate for a large amount of distilled water each time the ultrasonic wafer is washed with a large amount of distilled water.

[0046] Step 2: Put the clean F-MICA substrate in the ultraviolet light irradition for 40 min, so that the surface of the substrate reaches "atom cleanliness".

[0047] Step 3: CO (NO 3 ) 2 · 6h 2 O (cobalt nitrate), C 20 Hide 28 HFO 8 (Acetylacetonate) is proportional to the raw material, and the molar ratio of cobalt nitrate and acetylacetonate is 0.05: 0.95. Cobalt nitrate and acetic acid were stirred for 15 min to mix the solution A, and the acetylacetonate and acetylacetone were mixed at 60 ° C water bath until dissolved to dissolve B. Finally, two solutions were mixed for 1.5 h, and still 12 h got CO ion-doped HFO. 2 Pretty fluid.

[0048] Step 4: CO ion doped HFO 2 The precursor was prepared by a s...

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