Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device
a manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device details, crystal growth process, polycrystalline material growth, etc., can solve the problems of crack generation, warpage cracks (c), and the difference of thermal expansion coefficients, and achieve the effect of preventing crack generation and warpage and being easy to handl
Active Publication Date: 2015-01-13
SAMSUNG ELECTRONICS CO LTD
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Benefits of technology
This approach effectively prevents cracks and warpage during the separation process, enabling the production of high-quality nitride-based single crystal substrates and light emitting devices with improved handling and processing capabilities.
Problems solved by technology
However, the preliminary substrate is made of a material different from the nitride based light emitting structure, thus causing warpage and cracks (C) at the interface therebetween due to a difference of lattice constants and a difference of thermal expansion coefficients.
Particularly, thermal stress due to the difference of thermal expansion coefficients severely occurs when the nitride based single crystal grown at a high temperature (900˜1,200° C. is cooled to the room temperature for the laser lift-off process.
However, this method requires specially designed deposition equipment.
Method used
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[0031]Now, preferred embodiments of the present invention will be described in detail with reference to the annexed drawings.
[0032]FIGS. 2A to 2E are sectional views for illustrating a method for manufacturing a nitride based single crystal in accordance with one embodiment of the present invention.
[0033]First, as shown in FIG. 2A, a nitride based single crystal layer 25 is formed on a preliminary substrate 21. The preliminary substrate 21 mainly uses a sapphire substrate. However, the preliminary substrate 21 is not limited thereto, and may use any substrate having a higher band gap than that of a nitride based single crystal. For example, the preliminary substrate 21 is made of one material selected from the group consisting of SiC, Si, MgAl2O4, MgO, LiAlO2, and LiGaO2. The nitride based single crystal layer 25 satisfies the molecular formula of AlxInyGa(1-x-y)N (here, 0≦x≦1, 0≦y≦1, and 0≦x+y≦1). The nitride based single crystal layer 25 is grown on the preliminary substrate 21 us...
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Abstract
A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device. The method for manufacturing the nitride based single crystal substrate includes forming a nitride based single crystal layer on a preliminary substrate; forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based single crystal layer and hardening the applied adhesive material; and separating the nitride based single crystal layer from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate. The method for manufacturing the nitride based single crystal substrate is applied to the manufacture of a nitride based semiconductor device having a vertical structure.
Description
CLAIM OF PRIORITY[0001]This application claims the benefit of Korean Patent Application No. 2005-74246 filed on Aug. 12, 2005, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device, and more particularly to a method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device, which prevent yield reduction due to cracks generated in a laser lift-off process.[0004]2. Description of the Related Art[0005]Generally, III-V group nitride based semiconductors emit light of a wide range from visible rays to ultraviolet rays. These nitride based semiconductors are widely used as optical elements for emitting ultraviolet rays and a bluish green color...
Claims
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IPC IPC(8): H01L21/00C30B29/40H01L33/32C30B29/60H01L21/683H01L21/78H01L23/00H01L33/00H01L33/44
CPCC30B29/403C30B29/60H01L21/6835H01L21/6836H01L21/78H01L24/96H01L33/0075H01L33/0079H01L2221/68327H01L2221/68363H01L2221/68368H01L2924/01003H01L2924/01012H01L2924/01013H01L2924/01015H01L2924/01027H01L2924/01029H01L2924/01033H01L2924/01047H01L2924/0106H01L2924/01073H01L2924/01079H01L2924/01082H01L2924/10329H01L2924/01005H01L2924/01006H01L2924/01023H01L2924/12041H01L2924/00H01L2924/351H01L2924/12042H01L2924/3511H01L33/0093
InventorYANG, JONG INPARK, KI YON
OwnerSAMSUNG ELECTRONICS CO LTD